| PART |
Description |
Maker |
| SI2316BDS |
TrenchFET? Power MOSFET PWM Optimized 100 % Rg
|
TY Semiconductor Co., Ltd
|
| HYB18L256160BC-7.5 HYE18L256160BC-7.5 HYB18L256160 |
Very low Power SDRAM optimized for battery-powered, handheld applications
|
Infineon
|
| R10 JA1 JA2 C7-C8 |
Sample Program (Lux Meter)
|
Renesas Electronics Corporation
|
| ISL9N306AS3ST ISL9N306AP3 ISL9N306AS3STNL |
N-Channel Logic Level PWM Optimized UltraFET TrenchPower MOSFET
N-Channel Logic Level PWM Optimized UltraFETTrench Power MOSFETs
N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
|
FAIRCHILD[Fairchild Semiconductor]
|
| PT233 |
Analog Function Switch
A 100V Single N-Channel HEXFET Power MOSFET in a DirectFET SH package rated at 19 amperes optimized with low on resistance for applications
|
Princeton Technology Corporation
|
| AD621 AD621ARZ-R7 AD621AR-REEL AD621AR-REEL7 AD621 |
-18V; 650mW; low drift, low power instrumentation amplifier. For weigh scales, transduver interface and data acquisition systems
Low Drift, Low Power Instrumentation Amp with fixed gains of 10 and 100 INSTRUMENTATION AMPLIFIER, 185 uV OFFSET-MAX, 0.2 MHz BAND WIDTH, PDSO8
Low Cost,Low Power Instrumention Amplifier
|
Analog Devices, Inc.
|
| ISL9N306AD ISL9N306AD3 ISL9N306AD3ST |
N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs 30V, 50A, 6mз 50 A, 30 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs 30V 50A 6m
N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs 30V, 50A, 6m?/a>
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| SFM-2A-1 |
MESFET HIGH IP3 MIXER SURFACE OPTIMIZED BANDWIDTH
OPTIMIZED BANDWIDTH SURFACE MOUNT MODEL
|
SYNERGY MICROWAVE CORPORATION
ETC[ETC]
List of Unclassifed Manufacturers
|
| MBR4045CT |
This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature.
|
Kersemi Electronic Co., Ltd.
|
