| PART |
Description |
Maker |
| MTP3N60E_D ON2606 ON2605 MTP3N60E MTP3N60E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 3.0 AMPERES 600 VOLTS RDS(on) = 2.2 OHMS
From old datasheet system
|
ON Semiconductor
Motorola, Inc.
|
| MTP10N40 MTP10N40E ON2540 MTP10N40E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 10 AMPERES 400 VOLTS RDS(on) = 0.55 OHMS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| MMBT7002K-15 |
N-Channel Enhancement Mode FET
|
Diotec Semiconductor
|
| ZVN3310F ZVP3310F ZVP3310FTA ZVP3310F-15 |
SOT23 P-CHANNEL ENHANCEMENT SOT23 P-CHANNEL ENHANCEMENT
SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
|
Diodes Incorporated
|
| STT3405P |
P-Channel Enhancement Mode Mos.FET
|
SeCoS
|
| SMG2306N |
N-Channel Enhancement Mode Mos.FET
|
SeCoS Halbleitertechnologie GmbH
|
| SMG2306NE |
N-Channel Enhancement Mode Mos.FET
|
SeCoS Halbleitertechnologie GmbH
|
| STT3458N |
N-Channel Enhancement Mode Mos.FET
|
SeCoS Halbleitertechnologie GmbH
|
| STT3434N |
N-Channel Enhancement Mode Mos.FET
|
SeCoS
|
| STT3470N |
N-Channel Enhancement Mode Mos.FET
|
SeCoS Halbleitertechnologie GmbH
SeCoS Halbleitertechnologie...
|
| SSE90N06-15P |
N-Channel Enhancement Mode Mos.FET
|
SeCoS Halbleitertechnologie GmbH
|
