| PART |
Description |
Maker |
| BLL1214-250R |
L-band radar LDMOS transistor L BAND, Si, N-CHANNEL, RF POWER, MOSFET
L-band radar LDMOS transistor BLL1214-250R<SOT502A (SOT502A)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
LDMOS L-band radar power transistor
|
NXP Semiconductors N.V.
|
| HVV1214-100 HVV1214-100-EK |
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200渭s Pulse, 10% Duty For Ground Based Radar Applications
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty For Ground Based Radar Applications
|
HVVi Semiconductors, Inc.
|
| AM82731-003 2769 |
RF & Microwave Transistors S-Band Radar Applications(用于S波段雷达脉冲驱动的RF和微波晶体管)
From old datasheet system
S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
| 2729-170 |
170 Watts, 38 Volts, 100μs, 10% Radar 2700-2900 MHz
170 Watts, 38 Volts, 100渭s, 10% Radar 2700-2900 MHz
170 Watts, 38 Volts, 100刁, 10% Radar 2700-2900 MHz
|
MICROSEMI[Microsemi Corporation]
|
| NJM12901 NJM12901D1 NJM12901E NJM12901M NJM12901V |
RADAR PULSED POWER TRANSISTOR 25 WATTS, 2.70-2.90 GHz, 100ms PULSE, 10% DUTY
PH2729-25M RADAR PULSED POWER TRANSISTOR 25 WATTS, 2.70-2.90 GHz, 100s PULSE, 10% DUTY
RADAR PULSED POWER TRANSISTOR 25 WATTS 2.70-2.90 GHz 100ms PULSE 10% DUTY
PH2729-25M RADAR PULSED POWER TRANSISTOR 25 WATTS / 2.70-2.90 GHz / 100s PULSE / 10% DUTY
RADAR PULSED POWER TRANSISTOR 25 WATTS/ 2.70-2.90 GHz/ 100ms PULSE/ 10% DUTY
PH2729-25M RADAR PULSED POWER TRANSISTOR 25 WATTS, 2.70-2.90 GHz, 100?? PULSE, 10% DUTY
|
MACOM[Tyco Electronics]
|
| PH2931-I3 PH2931-135S |
Rail-to-Rail, Very Low Noise Universal Dual Filter Building Block; Package: SO; No of Pins: 16; Temperature Range: -40°C to 85°C
Radar Pulsed Power Transistor/ 135W/ 20ms Pulse/ 1% Duty 2.9 - 3.1 GHz
Radar Pulsed Power Transistor, 135W, 20ms Pulse, 1% Duty 2.9 - 3.1 GHz 雷达脉冲功率晶体管，135W0毫秒脉冲1％的责任二月九日至三月一日吉
|
Tyco Electronics
|
| AM80814-005 |
RF & Microwave Transistors L-Band Radar Applications(用于L波段雷达脉冲驱动的RF和微波晶体管)
L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
|
意法半导
STMicroelectronics
SGS Thomson Microelectronics
|
| PH3135-5M |
Radar Pulsed Power Transistor 5W, 3.1-3.5 GHz, 100μs Pulse, 10% Duty
Radar Pulsed Power Transistor 5W, 3.1-3.5 GHz, 100楼矛s Pulse, 10% Duty
|
M/A-COM Technology Solutions, Inc.
|
| PH2731-5M |
Radar Pulsed Power Transistor 5W, 2.7-3.1 GHz, 100μs Pulse, 10% Duty
Radar Pulsed Power Transistor 5W, 2.7-3.1 GHz, 100楼矛s Pulse, 10% Duty
|
M/A-COM Technology Solutions, Inc.
|
| 1214-300M |
300 Watts - 40 Volts, 150楼矛s, 10% Radar 1200 - 1400 MHz
300 Watts - 40 Volts, 150μs, 10% Radar 1200 - 1400 MHz
|
Microsemi Corporation
|
|
