| PART |
Description |
Maker |
| HY29F400BT-55 HY29F400BR-90 HY29F400BT-70 HY29F400 |
x8/x16 Flash EEPROM 256K X 16 FLASH 5V PROM, 90 ns, PDSO48
4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory 4兆位12Kx8/256Kx16伏只闪存
x8/x16 Flash EEPROM 256K X 16 FLASH 5V PROM, 45 ns, PDSO48
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| AS29P200 AS29F200B-120SC AS29F200B-70TC AS29F200B- |
5V 256K x 8 / 128K x 16 CMOS Flash EEPROM
5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 120ns
5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 70ns
5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 55ns
5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 90ns
|
Alliance Semiconductor
|
| PUMA68F4001I-15 PUMA68F4001MB-17 PUMA68F4001M-17 P |
x32 Flash EEPROM Module
1M (64K X 16), 3V, FLASH, VSOP, COM TEMP(FLASH) X32号，闪存EEPROM模块
|
Macronix International Co., Ltd.
|
| EDI7F342MC-BNC EDI7F342MC120BNC EDI7F342MC90BNC |
EEPROM EEPROM
Intel/Sharp Flash Modules
|
Ecliptek, Corp.
|
| BM29F400T-15TC BM29F400T-90TC BM29F400T-12TC |
x8/x16 Flash EEPROM
256K X 16 FLASH 5V PROM, 120 ns, PDSO48
|
WINBOND ELECTRONICS CORP
|
| LH28F160S5HB-L70 LH28F160S5HB-L10 LH28F160S5HD-L10 |
1M X 16 FLASH 5V PROM, 80 ns, PDSO56 0.600 INCH, PLASTIC, SSOP-56
x8/x16 Flash EEPROM x8/x16闪存EEPROM
|
Sharp Electronics, Corp.
Sharp, Corp.
|
| SST39VF016-70-4C-B2K SST39VF080-90-4I-B2K SST39VF0 |
x8 Flash EEPROM
4-Mbit (256K x 16) Static RAM
CYRF6936 - WirelessUSB™ LP 2.4 GHz Radio SoC
IC SRAM 32KX8 3.0V LP 28-SOIC
20-, 40-, and 60-Bit I/O Expander with EEPROM x8闪存EEPROM
|
Silicon Storage Technology, Inc.
|
| HY29LV160 HY29LV160BF-12 HY29LV160BF-12I HY29LV160 |
IC,EEPROM,NOR FLASH,1MX16/2MX8,CMOS,TSSOP,48PIN,PLASTIC
16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory
|
HYNIX[Hynix Semiconductor]
|
| SST29EE010-70-4C-UH SST29VE010-70-4C-UH SST29LE010 |
1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 5V PROM, 70 ns, PQCC32
1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 5V PROM, 70 ns, PDSO32
1 Mbit (128K x8) Page-Mode EEPROM 1兆位28K的8）页模式EEPROM
1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 5V PROM, 90 ns, PQCC32
1 Mbit (128K x8) Page-Mode EEPROM 1兆位128K的8）页模式的EEPROM
1 Mbit (128K x8) Page-Mode EEPROM 1兆位28K的8）页模式的EEPROM
1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 2.7V PROM, 200 ns, PDSO32
|
Silicon Storage Technology, Inc.
SILICON STORAGE TECHNOLOGY INC
|
| PIC16LF628A-E/ML PIC16LF628A-E/P PIC16LF628A-E/SO |
FLASH-Based 8-Bit CMOS Microcontrollers
8-bit CMOS microcontroller, FLASH=1024 word, RAM=224b, EEPROM=128b, 20MHz
8-bit CMOS microcontroller, FLASH=2048 word, RAM=224b, EEPROM=128b, 20MHz
8-bit CMOS microcontroller, FLASH=4096 word, RAM=256b, EEPROM=256b, 20MHz
|
Microchip
|
| STM8S103K3T6C STM8S103F3M3 STM8S103F2 STM8S103K3T3 |
Mainstream Access line 8-bit MCU with 4 Kbytes Flash, 16 MHz CPU, integrated EEPROM
Mainstream Access line 8-bit MCU with 8 Kbytes Flash, 16 MHz CPU, integrated EEPROM
Access line, 16 MHz STM8S 8-bit MCU, up to 8 Kbytes Flash, data EEPROM,10-bit ADC, 3 timers, UART, SPI, I2C
|
ST Microelectronics
STMicroelectronics
|
