| PART |
Description |
Maker |
| KMM372V3200BS1 |
32M x 72 DRAM DIMM(32M x 72 动RAM模块) 32M × 72配置的DRAM内存2M × 72配置动态内存模块）
|
Samsung Semiconductor Co., Ltd.
|
| HYB39S5121600AT-8 HYB39S5121600AT-7 HYB39S5121600A |
512Mb (32M x 16) PC100 2-2-2 Available Q402
512Mb (32M x 16) PC133 2-2-2 Available Q402
512Mb (32M x 16) PC133 3-3-3 Available Q402
128M X 4 SYNCHRONOUS DRAM, 5 ns, PDSO54
|
INFINEON TECHNOLOGIES AG
|
| KMM374S3323T |
32Mx72 SDRAM DIMM(32M x 72 动RAM模块) 32Mx72 SDRAM的内存（32M × 72配置动态内存模块）
|
Samsung Semiconductor Co., Ltd.
|
| KMM375S3227BT |
32Mx72 SDRAM DIMM(32M x 72 动RAM模块) 32Mx72 SDRAM的内存（32M × 72配置动态内存模块）
|
Samsung Semiconductor Co., Ltd.
|
| MC-4532CD646XF-A10 MC-4532CD646XF-A80 MC-4532CD646 |
32M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168 SOCKET TYPE, DIMM-168
32M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
|
Elpida Memory, Inc.
|
| KM23C32205BSG |
32M-Bit (2Mx16 /1Mx32) CMOS Mask ROM(32M(2Mx16 /1Mx32) CMOS掩膜ROM) 32兆位Mx16 / 1Mx32）的CMOS掩模ROM2兆位Mx16 / 1Mx32）的CMOS掩膜光盘
|
Samsung Semiconductor Co., Ltd.
|
| K4M511633C-RBF1H K4M511633C-RBF75 K4M511633C-RBL K |
32M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
32M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54
8M X 16BIT X 4 BANKS MOBILE SDRAM IN 54FBGA
|
Samsung semiconductor
|
| HYB39S256800CT-8 HYB39S256400CT-7.5 HYB39S256800CT |
256Mb (64M x 4) PC133 3-3-3
256Mb (32M x 8) PC133 3-3-3
256Mb (32M x 8) PC100 2-2-2 56Mb的（32M的8）PC100-2-2
x16 SDRAM x16内存
|
Toshiba, Corp.
SIEMENS AG
|
| MBM29DL321TD-80 MBM29DL321TD-80PBT MBM29DL321TD-80 |
FLASH MEMORY 32M (4M x 8/2M x 16) BIT Dual Operation
CMOS 32M (4M x 8/2M x16) bit dual operation
|
Fujitsu Microelectronics
|
| K4S510432M K4S510432M-TC1H K4S510432M-TC1L K4S5104 |
32M x 4Bit x 4 Banks Synchronous DRAM Data Sheet
512Mbit SDRAM 32M x 4bit x 4 Banks Synchronous DRAM LVTTL
|
Samsung Electronic
Samsung semiconductor
|
