| PART |
Description |
Maker |
| HY62SF16804A-SMI HY62SF16804A-DMC HY62SF16804A-I H |
512Kx16bit full CMOS SRAM
|
Hynix Semiconductor
|
| HY62UF16804B HY62UF16804B-DFC HY62UF16804B-DFI |
512Kx16bit full CMOS SRAM
|
Hynix Semiconductor
|
| HY62LF16806B-C HY62LF16806B-DFC HY62LF16806B-DFI H |
512Kx16bit full CMOS SRAM
|
Hynix Semiconductor
|
| HY62KF08401C HY62KF08401C-DI HY62KF08401C-DS HY62K |
x8|2.7~3.6V|55/70|Super Low Power Slow SRAM - 4M
512Kx8bit full CMOS SRAM
|
Hynix Semiconductor
|
| AS7C256 AS7C256-10 AS7C256-10JC AS7C256-10PC AS7C2 |
ECONOLINE: RSZ/P - 1kVDC & 2kVDC Isolation- UL94V-0 Package Material- No Heatsink Required- No Extern. Components Required- Toroidal Magnetics- ContinuousShort Circuit Protection ( /P-Suffix)
High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 35 ns, PDSO28
High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 10 ns, PDSO28
High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 25 ns, PDSO28
High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 12 ns, PDSO28
High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 12 ns, PDIP28
High Performance 32Kx8 CMOS SRAM 高性能32Kx8 CMOS SRAM
High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 10 ns, PDIP28
High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 25 ns, PDIP28
|
ETC[ETC]
ALSC[Alliance Semiconductor Corporation]
Alliance Semiconductor, Corp.
Alliance Semiconductor ...
|
| HY62SF16201A HY62SF16201A-I HY62SF16201ALLF HY62SF |
128Kx16bit full CMOS SRAM
|
Hynix Semiconductor Inc.
|
| K5A3280YBA |
32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 8M(1Mx8/512Kx16) Full CMOS SRAM
|
SAMSUNG
|
| HY62LF16804B-C HY62LF16804B-I |
High speed, super low power and 8Mbit full CMOS SRAM organized as 512K words by 16bits
|
HYNIX
|
| HY62SF16406E |
High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
|
HYNIX
|
| HY62SF16806B-I HY62SF16806B-C |
High speed, super low power and 8Mbit full CMOS SRAM organized as 524,288 words by 16bits
|
HYNIX
|
