PART |
Description |
Maker |
APT20GN60B APT20GN60BG APT20GN60S APT20GN60SG |
Thunderbolt High Speed NPT IGBT
|
Microsemi Corporation
|
APT20GS60SRDQ1 APT20GS60SRDQ1G APT20GS60BRDQ1 APT2 |
Thunderbolt High Speed NPT IGBT with Anti-Parallel DQ Diode
|
Microsemi Corporation
|
SGP20N60HS09 SGP20N60HS SGW20N60HS |
High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation
|
http:// Infineon Technologies AG
|
SKB06N60HS SKB06N60HS07 |
High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
HGTP10N120BN HGTG10N120BN HGT1S10N120BNS HGT1S10N1 |
1200V, NPT Series N-Channel IGBT; Package: TO-263(D2PAK); No of Pins: 2; Container: Tape & Reel 35 A, 1200 V, N-CHANNEL IGBT, TO-263AB 35A/ 1200V/ NPT Series N-Channel IGBT 35A, 1200V, NPT Series N-Channel IGBT 35 A, 1200 V, NPT N-Channel IGBT
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
SIGC25T60UN Q67041-A4667-A001 SGP30N60HS |
HIGHT SPEED IGBT CHIP IN NPT-TECHNOLOGY
|
Infineon Technologies A... INFINEON[Infineon Technologies AG]
|
SGP30N60HS |
HIGHT SPEED IGBT CHIP IN NPT-TECHNOLOGY HIGHT高速IGBT的芯片在不扩散核武器条约技
|
Infineon Technologies AG
|
APT100GT120JR |
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: ISOTOP®; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 60; 123 A, 1200 V, N-CHANNEL IGBT Thunderbolt IGBT
|
Microsemi, Corp. Microsemi Corporation
|
BUP400D Q67040-A4423-A2 BUP400-D |
IGBT Duopack (IGBT with Antiparallel ... IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode) From old datasheet system High Speed CMOS Logic 7-Stage Binary Ripple Counter 14-TSSOP -55 to 125 由于IGBT的反平行二极管(低正向压降高开关速度低尾电流的无闩锁包括快速滑行二极管
|
Siemens Semiconductor G... Infineon Siemens Semiconductor Group SIEMENS AG
|