| PART |
Description |
Maker |
| RA20H8994M-101 RA20H8994M11 |
RoHS Compliance , 896-941MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO
|
Mitsubishi Electric Semiconductor
|
| DS55-0004 DS55-0004-TB DS55-0004-TR |
Low Cost Five-Way GMIC SMT Power Divider 824-896 MHz
|
M/A-COM Technology Solutions, Inc.
|
| 0896FB15A0100 |
896 MHz Balun/Filer Combination
|
Johanson Technology Inc.
|
| 0896BM15A0001 |
896 MHz Balun/Matching Network for T.I. Chipset CC11XX
|
Johanson Technology Inc.
|
| BSM101AR C67076-S1018-A2 BSM101 |
From old datasheet system
SIMOPAC Module (Power module Single switch N channel Enhancement mode) SIMOPAC模块（单开关电源模块N通道增强模式
SIMOPAC Module (Power module Single switch N channel Enhancement mode) 200 A, 50 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
| PF0027 |
MOS FET Power Amplifier Module
MOSFET Power Ampllfier Module for E-TACS Handy Phone
|
Renesas Technology
Hitachi Semiconductor
|
| C67076-A2515-A67 050D06N2 BSM50GD60DN2 |
IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| MCO500-18IO1 MCO500 MCO500-12IO1 MCO500-14IO1 MCO5 |
1800V high power thyristor module
1600V high power thyristor module
1400V high power thyristor module
1200V high power thyristor module
High Power Thyristor Modules
|
IXYS[IXYS Corporation]
|
| BSM35GD120D2 035D12D2 C67076-A2506-A17 |
IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes) IGBT功率模块（功率模相全桥包括快速滑行二极管
From old datasheet system
|
TE Connectivity, Ltd.
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
