PART |
Description |
Maker |
SPA07N60C3 SPI07N60C3 SPP07N60C3 SPP07N60C307 |
New revolutionary high voltage technology Ultra low gate charge
|
Infineon Technologies AG
|
SPA11N60CFD SPA11N60CFD10 |
CoolMOSTM Power Transistor Features New revolutionary high voltage technology
|
Infineon Technologies AG
|
SPD02N80C308 |
CoolMOSTM Power Transistor Features New revolutionary high voltage technology
|
Infineon Technologies AG
|
SPP02N60C3 SPP02N60C307 SPP02N60C309 |
Cool MOS Power Transistor Feature New revolutionary high voltage technology
|
Infineon Technologies AG Infineon Technologies A...
|
SPN03N60S5 SPN03N60S505 |
New revolutionary high voltage technology Ultra low gate chargeExtreme dv/dt rated
|
Infineon Technologies AG
|
SPP20N60CFD09 |
Cool MOS Power Transistor Feature New revolutionary high voltage technology Cool MOS?/a> Power Transistor Feature New revolutionary high voltage technology
|
Infineon Technologies AG
|
SPB20N60C3 SPB20N60C309 |
Cool MOS Power Transistor Feature new revolutionary high voltage technology
|
Infineon Technologies AG
|
SPN01N60C3 SPN01N60C305 |
New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated
|
Infineon Technologies AG
|
SPB07N60C305 |
New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated
|
Infineon Technologies AG
|
SPI11N60CFD |
New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated
|
Infineon Technologies AG
|
IPB60R060C7 |
CoolMOS?C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies.
|
Infineon Technologies A...
|