| PART |
Description |
Maker |
| FMM7G20US60SN |
Compact & Complex Module
|
Fairchild Semiconductor
|
| FMS6G15US60 |
Compact & Complex Module
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| FMS6G10US60 |
Compact & Complex Module
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| FMS6G20US60 |
Compact & Complex Module
|
Fairchild Semiconductor Corporation
|
| FMC6G30US60 |
Function Generator; Bandwidth Max:120MHz; Amplitude Accuracy :0.01dB; Frequency Max:120MHz; Frequency Min:0.1Hz; Waveforms:27 Built-in RoHS Compliant: NA
Compact & Complex Module
|
Fairchild Semiconductor Corporation
|
| FMC7G30US60 |
IGBT
Compact & Complex Module
Arbitrary/Function Generator; Bandwidth Max:20MHz; Amplitude Accuracy :0.01dB; Frequency Max:20MHz; Frequency Min:0.1Hz; Waveforms:27 Built-in RoHS Compliant: NA
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| EP1810GI-25 EP1810JI-25 EP1810JC-20 |
UV-Erasable/OTP Complex PLD
Dual LDO with Low Noise, Low IQ, and High PSRR; Temperature Range: -40°C to 85°C; Package: 10-DFN T&R UV-Erasable/OTP复杂可编程逻辑器件
|
Vicor, Corp.
|
| RTP21010-11 |
This HPA Module is a high gain and compact amplifier module for WCDMA and LTE Repeater use.
|
RFHIC
|
| 7MBR25NE120 |
TRANSISTOR,IGBT POWER MODULE,COMPLEX BRIDGE,1.2KV V(BR)CES,25A I(C)
From old datasheet system
|
Fuji Semiconductors, Inc.
|
| MIG20J806HA |
TRANSISTOR | IGBT POWER MODULE | COMPLEX BRIDGE | 600V V(BR)CES | 25A I(C) 晶体管| IGBT功率模块|络合物桥| 600V的五（巴西）国际消费电子展|5A一（c
|
Toshiba, Corp.
|
