PART |
Description |
Maker |
SMF-06020 |
Power Optimized GaAs FET
|
Samsung Electronics
|
SMF06020 |
Power Optimized GaAs FET
|
SAMSUNG[Samsung semiconductor]
|
HMF06020 HMF-06020 HARRISCORPORATION-HMF06020 |
Power Optimized GaAs FET 2-14 GHz 功率优化的砷化镓场效应管2-14千兆
|
Harris, Corp. HARRIS[Harris Corporation]
|
MGF0905A MGF0905 0905A |
MINIATURE POWER RELAY L /S BAND POWER GaAs FET L,S BAND POWER GaAs FET LS BAND POWER GaAs FET From old datasheet system
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
FLL1200IU-2 |
L-Band Medium & High Power GaAs FET L BAND, GaAs, N-CHANNEL, RF POWER, JFET L-Band Medium & High Power GaAs FET
|
Fujitsu Component Limited. Fujitsu, Ltd. Fujitsu Limited
|
MGFC39V3742A04 MGFC39V3742A |
C BAND, GaAs, N-CHANNEL, RF POWER, JFET 3.7 ~ 4.2GHz BAND 8W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
NE650R279A NE650R279A-T1 |
0.2 W L, S-BAND POWER GaAs MES FET 0.2册,S波段功率GaAs场效应晶体管 0.2 W L / S-BAND POWER GaAs MES FET
|
NEC, Corp. NEC Corp. NEC[NEC]
|
SI4884DY |
Single N-Channel Logic Level PWM Optimized PowerTrench MOSFET 0.01 ohm, Si, POWER, FET Single N-Channel Logic Level PWM Optimized PowerTrench MOSFET
|
Fairchild Semiconductor, Corp.
|
SWD-109TR SWD-119TR SWD-109119 SWD-109RTR SWD-119R |
Single/quad driver for GaAs FET switche and attenuator Single/Quad Drivers for GaAs FET Switches and Attenuators
|
MA-Com Tyco Electronics
|
TIM1414-2L |
MICROWAVE POWER GaAs FET
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|