PART |
Description |
Maker |
NMA5108-B1M |
High Power Broadband Noise Sources 100 Hz to 300 MHz
|
Micronetics, Inc.
|
CNS7106-D1C |
High Power Broadband Noise Sources 200 kHz to 12 MHz
|
Micronetics, Inc.
|
NMA5200-A1M |
High Power Broadband Noise Sources 100 Hz to 1000 MHz
|
Micronetics, Inc.
|
NMA2511-1T |
High Power Broadband Noise Sources 10 MHz to 1500 MHz
|
Micronetics, Inc.
|
NMA2512-1T |
High Power Broadband Noise Sources 10 MHz to 2000 MHz
|
Micronetics, Inc.
|
BFP182W |
RF-Bipolar - For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA
|
Infineon Technologies AG
|
BFR193W Q62702-F1510 |
From old datasheet system NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers)
|
http:// SIEMENS[Siemens Semiconductor Group]
|
BFP183R |
RF-Bipolar - For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA NPN Silicon RF Transistor
|
Infineon Technologies AG
|
BFP182R |
NPN Silicon RF Transistor RF-Bipolar - For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA
|
Infineon Technologies AG
|
Q62702-F1086 BFR93A |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector current from 2mA to 30mA)
|
SIEMENS[Siemens Semiconductor Group]
|
BFP183R Q62702-F1594 |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA) From old datasheet system
|
SIEMENS[Siemens Semiconductor Group] Infineon
|