| PART |
Description |
Maker |
| RFDR09-51 RFDR09-55 |
GSM Converter
|
RFHIC
|
| MRF18030A |
MRF18030AR3, MRF18030ASR3 GSM/GSM EDGE 1.8 - 1.88 GHz, 30 W, 26 V Lateral N-Channel RF Power MOSFETs
|
Motorola
|
| MHVIC915R2 |
CDMA, GSM/GSM EDGE, 946-960 MHz, 15 W, 27 V RF LDMOS Wideband Integrated Amplifier
|
Motorola
|
| MRF5S9080NBR1 |
GSM/GSM EDGE LATERAL N-CHANNEL RF POWER MOSFETs
|
Freescale Semiconductor
|
| FAN5904 |
Multi-Mode Buck Converter for GSM/EDGE, 3G/3.5G and 4G PAs
|
Fairchild Semiconductor
|
| MF1043S-1 |
FOR GSM MOBILE TELEPHONE / Rx
FOR GSM MOBILE TELEPHONE, Rx
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| AV131-31507 |
HIP3?/a> Variable Attenuator for AMPS and GSM Base Stations
HIP3⑩ Variable Attenuator for AMPS and GSM Base Stations
|
Skyworks Solutions Inc.
|
| SKY77548 |
Tx-Rx iPAC垄芒 Front-End Module for Dual-Band GSM / GPRS
Tx-Rx iPAC Front-End Module for Dual-Band GSM / GPRS
|
Skyworks Solutions Inc.
|
| MRF9100R3 MRF9100 MRF9100SR3 |
GSM/EDGE 900 MHz, 110 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF9100, MRF9100R3, MRF9100SR3 GSM/EDGE 900 MHz, 110 W, 26 V Lateral N-Channel RF Power MOSFETs
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
|
| B39941B5057U410 |
SAW Tx Filter R-GSM
|
EPCOS
|
| B39192B5104U410 |
GSM 1900
|
EPCOS
|
| PMB2240 |
GSM-Transmitter
|
Siemens Semiconductor Group
|
