PART |
Description |
Maker |
HY57V28420HCLT-H HY57V28420HCLT-K HY57V28420HCLT |
32M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 SDRAM - 128Mb 32Mx4|3.3V|4K|6/K/H/8/P/S|SDR SDRAM - 128M 32Mx4 | 3.3 | 4K的| 6/K/H/8/P/S |特别提款权的SDRAM - 128M
|
HYNIX SEMICONDUCTOR INC TE Connectivity, Ltd.
|
HYB39S128160CT HYB39S128800CT |
128-Mbit(4banks × 2MBit × 16) Synchronous DRAM(128M(4× 2M× 16)同步动态RAM) 128-Mbit(4banks × 4MBit × 8) Synchronous DRAM(128M(4× 4M× 8)同步动态RAM) 128兆位banks ×Mb × 8)同步DRAM28M的(4 × 4分列位8)同步动态RAM)的
|
SIEMENS AG
|
PD45128163-SU PD45128163G5-A75SU-9JF PD45128163G5- |
128M-bit Synchronous DRAM 4-bank/ LVTTL WTR (Wide Temperature Range) 128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range) 128兆位同步DRAM 4银行,LVTTL水树(宽温度范围
|
Elpida Memory, Inc.
|
EBD11ED8ADFB-5C EBD11ED8ADFB-5 EBD11ED8ADFB-5B EBD |
128M X 72 DDR DRAM MODULE, 0.7 ns, DMA184 1GB Unbuffered DDR SDRAM DIMM (128M words x72 bits, 2 Ranks)
|
ELPIDA MEMORY INC Elpida Memory, Inc. ELPIDA[Elpida Memory]
|
M2V28S40TP-7L M2V28S30TP-7L M2V28S30TP-8L M2V28S40 |
128M Synchronous DRAM 128M的同步DRAM
|
Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
|
UPD45128163-A75L |
128M-bit Synchronous DRAM 4-bank, LVTTL
|
Elpida Memory, Inc.
|
MC-4R256CEE6C-845 MC-4R256CEE6B MC-4R256CEE6B-653 |
Direct Rambus DRAM RIMM Module 256M-BYTE 128M-WORD x 16-BIT 128M X 16 DIRECT RAMBUS DRAM MODULE, 45 ns, DMA184
|
http:// NEC[NEC] NEC Corp.
|
DPSD128MX4WY5-DP-XX15I |
128M X 4 SYNCHRONOUS DRAM MODULE, 15 ns, PDSO54 LEADLESS, TSOP-54
|
Spacecraft Components, Corp.
|
MC-4R256CPE6C-845 MC-4R256CPE6C MC-4R256CPE6C-653 |
Direct Rambus DRAM RIMM Module 256M-BYTE 128M-WORD x 16-BIT 128M X 16 DIRECT RAMBUS DRAM MODULE, 45 ns, DMA184 RIMM-184
|
http:// NEC[NEC] NEC Corp. Performance Semiconductor, Corp.
|
TH58NS100DC |
1-GBIT (128M x 8 BITS) CMOS NAND E PROM (128M BYTE SmartMedia )
|
TOSHIBA
|