| PART |
Description |
Maker |
| F59D4G81A |
Voltage Supply: 1.8V (1.7V ~ 1.95V)
|
Elite Semiconductor Mem...
|
| X9523B20I-B |
RECTIFIER FAST-RECOVERY SINGLE 3A 100V 125A-ifsm 0.95V-vf 35ns 5uA-ir DO-201AD 500/BULK
|
Intersil Corporation
|
| K9F1208Q0A-XXB0 K9F1208Q0B K9F1208Q0A-DIB0 K9F1208 |
64M x 8 bit NAND flash memory, 2.7 - 3.6V
512Mb/256Mb 1.8V NAND Flash Errata
64M x 8 bit NAND flash memory, 1.70 - 1.95V
32M x 16 bit NAND flash memory, 2.7 - 3.6V
32M x 16 bit NAND flash memory, 1.70 - 1.95V
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| ICS95V2F857A 95V2F857AKLFT |
95V SERIES, PLL BASED CLOCK DRIVER, 10 TRUE OUTPUT(S), 0 INVERTED OUTPUT(S), QCC40
From old datasheet system
|
INTEGRATED DEVICE TECHNOLOGY INC
|
| IRG4PC30U IRG4PC30UPBF |
600V UltraFast 8-60 kHz Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A)
|
IRF[International Rectifier]
|
| IRG4BC30U |
600V UltraFast 8-60 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A)
|
IRF[International Rectifier]
|
| MPXS4100A6U MPXS4100A6T1 MPXS4100A |
INTEGRATED PRESSURE SENSOR 集成压力传感
INTEGRATED PRESSURE SENSOR ABSOLUTE, PEIZORESISTIVE PRESSURE SENSOR, 2.9-15.22Psi, 1.8%, 0.30-4.95V, RECTANGULAR, SURFACE MOUNT
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| ZPY18-TAP ZPY18-TR ZPY24-TAP ZPY30-TAP ZPY11-TR |
ZPY3V9 to ZPY100 Zener Diodes
ZENER SGL 17.95V 6% 1.3W 2PIN DO-41 - Tape and Reel
ZENER SGL 11V 5% 1.3W 2PIN DO-41 - Tape and Reel
|
Vishay Semiconductors
|
| BZX79C24 BZX79B7V5 BZX79B20 BZX79B22 BZX79B24 BZX7 |
Diode Zener Single 24.2V 5% 500mW 2-Pin ALF
Diode Zener Single 7.5V 2% 500mW 2-Pin ALF
Diode Zener Single 20V 2% 500mW 2-Pin ALF
Diode Zener Single 22V 2% 500mW 2-Pin ALF
Diode Zener Single 24V 2% 500mW 2-Pin ALF
Diode Zener Single 17.95V 5% 500mW 2-Pin ALF
|
New Jersey Semiconductor
|
