| PART |
Description |
Maker |
| M470L1714BT0-CLB0 M470L1714BT0-CLA0 M470L1714BT0-C |
16Mx64 200pin DDR SDRAM SODIMM based on 8Mx16 Data Sheet
128MB DDR SDRAM MODULE(16Mx64 based on 8Mx16 DDR SDRAM)
|
Samsung Electronic
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| M470L1713CT0 |
16Mx64 200pin DDR SDRAM SODIMM based on 16Mx8 Data Sheet
|
Samsung Electronic
|
| M470L1713BT0 |
16Mx64 200pin DDR SDRAM SODIMM based on 16Mx8 Data Sheet
|
Samsung Electronic
|
| M470L3224BT0 M470L3224BTO |
32Mx64 200pin DDR SDRAM SODIMM based on 32Mx8 Data Sheet
256MB DDR SDRAM MODULE
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HYMD216M646L6-H HYMD216M646L6-K HYMD216M6466-H |
SDRAM|DDR|16MX64|CMOS|DIMM|200PIN|PLASTIC
|
|
| HYMD18M725AL6-K HYMD18M725AL6-H HYMD18M725A6-H HYM |
SDRAM|DDR|8MX72|CMOS|DIMM|200PIN|PLASTIC
8M X 72 DDR DRAM MODULE, 0.75 ns, DMA200 67.60 X 31.75 X 1 MM, SODIMM-200
8M X 72 DDR DRAM MODULE, 0.8 ns, DMA200 67.60 X 31.75 X 1 MM, SODIMM-200
|
Hynix Semiconductor, Inc.
|
| M464S1724CT1-L1L_C1L M464S1724CT1-L1H_C1H M464S172 |
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD Data sheet
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD 16Mx64M × 16位的SODIMM内存4Banks4K的刷新，3.3V的同步DRAM的社民党
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD 16Mx64M × 16位的SODIMM内存BanksK的刷新，3.3V的同步DRAM的社民党
16M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA144
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| HMP125S6EFR8C-C4 HMP125S6EFR8C-S5 HMP125S6EFR8C-S6 |
256M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200
256M X 64 DDR DRAM MODULE, 0.4 ns, ZMA200 HALOGEN FREE AND ROHS COMPLIANT, SODIMM-200
128M X 64 DDR DRAM MODULE, 0.4 ns, ZMA200 HALOGEN FREE AND ROHS COMPLIANT, SODIMM-200
200pin Unbuffered DDR2 SDRAM SO-DIMMs
|
HYNIX SEMICONDUCTOR INC
Hynix Semiconductor, Inc.
|
| M368L3313DTL-CB0 M368L3313DTL-CB3 M368L3313DTL-CA2 |
256MB DDR SDRAM MODULE (32Mx64(16Mx64*2 bank) based on 16Mx8 DDR SDRAM)
|
Samsung semiconductor
|
| HYMD512M646CLFP8-D43 HYMD512M646CLFP8-J HYMD512M64 |
200pin DDR SDRAM SO-DIMMs based on 512Mb C ver. (FBGA)
128M X 64 DDR DRAM MODULE, 0.7 ns, DMA200
|
Hynix Semiconductor
HYNIX SEMICONDUCTOR INC
|
| M464S1654BT1-C1H M464S1654BT1-C1L M464S1654BT1-L1L |
16Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| M463S1654DT1 |
16Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet
|
Samsung Electronic
|
