| PART |
Description |
Maker |
| IS62WV5128ALL IS62WV5128BLL |
(IS62WV5128A(B)LL) 512K x 16 Low Voltage / Ultra Low Power CMOS SRAM
(IS62WV51218A(B)LL) 512K x 16 Low Voltage / Ultra Low Power CMOS SRAM
|
Integrated Silicon Solution
|
| IS62WV5128ALL-70TI IS62WV5128BLL IS62WV5128BLL-55T |
512K X 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
|
ISSI[Integrated Silicon Solution, Inc]
|
| BS62UV4000STI BS62UV4000 BS62UV4000EC BS62UV4000EI |
Ultra Low Power/Voltage CMOS SRAM 512K X 8 bit
|
BSI[Brilliance Semiconductor]
|
| BS616UV8011BC BS616UV8011FI BS616UV8011 BS616UV801 |
Ultra Low Power/Voltage CMOS SRAM 512K X 16 bit
|
BSI[Brilliance Semiconductor]
|
| K6F8016V3A K6F8016V3A-F K6F8016V3A-TF55 K6F8016V3A |
512K X 16 STANDARD SRAM, 55 ns, PDSO44
From old datasheet system
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| WMS512K8BV-20E WMS512K8BV-17E WMS512K8BV-17DEMEA W |
20ns; low voltage operation: 3.3V -10% power supply; 512K x 8 monolithic SRAM
17ns; low voltage operation: 3.3V -10% power supply; 512K x 8 monolithic SRAM
15ns; low voltage operation: 3.3V -10% power supply; 512K x 8 monolithic SRAM
512K X 8 STANDARD SRAM, 17 ns, CDSO32
512Kx8 Monolithic SRAM(512Kx8单片静态RAM（BiCMOS,存取时间17ns
512Kx8 Monolithic SRAM(512Kx8单片静态RAM（BiCMOS,存取时间20ns
|
White Electronic Designs Corporation
|
| AS5C4009ECJ-85L_883C AS5C4009ECJ-85L_IT AS5C4009EC |
512K x 8 SRAM Ultra Low Power SRAM
512K X 8 STANDARD SRAM, 100 ns, CDIP32
512K X 8 STANDARD SRAM, 85 ns, CDSO32
512K X 8 STANDARD SRAM, 70 ns, CDSO32
512K X 8 STANDARD SRAM, 55 ns, CDSO32
|
MICROSS COMPONENTS
AUSTIN SEMICONDUCTOR INC
|
| MAX6335US20D3-T MAX6336US20D3-T MAX6337US20D3-T MA |
4-Pin, Ultra-Low-Voltage, Low-Power μP Reset Circuits with Manual Reset
Ultra-low-voltage, low-power microprocessor circuit with manual reset (reset output active-high, push/pull . Reset threshold(typ) 1.6V, reset timeout(min) 20ms.
4-Pin, Ultra-Low-Voltage, Low-Power P Reset Circuits with Manual Reset
4-Pin / Ultra-Low-Voltage / Low-Power P Reset Circuits with Manual Reset
4-Pin, Ultra-Low-Voltage, Low-Power レP Reset Circuits with Manual Reset 4引脚，超低电压，低功耗与手动复位レP复位电路
2.5-W Mono Class-D Audio Amplifier with Variable Gain (TPA2010) 9-DSBGA -40 to 85 4引脚，超低电压，低功耗与手动复位レP复位电路
Ultra-low-voltage, low-power microprocessor circuit with manual reset (reset output active-high, push/pull . Reset threshold(typ) 1.6V, reset timeout(min) 1ms.
|
MAXIM - Dallas Semiconductor
Maixm
MAXIM[Maxim Integrated Products]
Maxim Integrated Products, Inc.
Maxim Integrated Produc...
|
| NCP705MT33TCG |
500 mA, Ultra-Low Quiescent Current, IQ 13 A, Ultra-Low Noise, LDO Voltage Regulator
|
ON Semiconductor
|
| NCP703MX28TCG NCP703MX18TCG NCP703SN30T1G NCP703SN |
300 mA, Ultra-Low Quiescent Current, IQ 12 A, Ultra-Low Noise, LDO Voltage Regulator
|
ON Semiconductor
|
| N08L63W2A |
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K X 16bit
|
ON Semiconductor
|
