| PART |
Description |
Maker |
| MRFG35003M6T1 |
MRFG35003M6T1 3.5 GHz, 3 W, 6 V Power FET GaAs PHEMT
GALLIUM ARSENIDE PHEMT
|
MOTOROLA[Motorola, Inc]
|
| MRFG35003MT1 |
MRFG35003MT1 3.5 GHz, 3 W, 12 V Power FET GaAs PHEMT
The RF GaAs Line GALLIUM ARSENIDE PHEMT RF POWER FIELD EFFECT TRANSISTOR
|
MOTOROLA[Motorola, Inc]
|
| HMC441 HMC440QS16G HMC441LM1 |
GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER/ 7.0 - 15.5 GHz
HBT DIGITAL PHASE-FREQUENCY DETECTOR/ 10 - 1300 MHz/ w/ INTEGRATED 5-BIT COUNTER/ 10 - 2800 MHz
800000 SYSTEM GATE 2.5 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN
GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 6.0 - 18.0 GHz
|
美国讯泰微波有限公司上海代表
HITTITE[Hittite Microwave Corporation]
|
| 0603CS-30NXJLW GJM1555C1HR80BB01D GRM188R71H104KA9 |
Enhancement Mode pHEMT Technology (E-pHEMT)
|
Freescale Semiconductor, Inc
|
| FPD3000 |
2W POWER PHEMT
|
Filtronic Compound Semicond...
FILTRONIC[Filtronic Compound Semiconductors]
|
| FPD3000 FPD30001 |
2W POWER PHEMT
|
Filtronic Compound Semiconductors
|
| FPD750 |
0.5W POWER PHEMT
|
Filtronic Compound Semiconductors
|
| HMC94911 |
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER WITH POWER DETECTOR, 12 - 16 GHz
|
Hittite Microwave Corporation
|
| HMC952ALP5GE |
GaAs pHEMT MMIC 2 Watt POWER AMPLIFIER WITH POWER DETECTOR
|
Analog Devices
|
| FPD1000AS-EB FPD1000AS FPD1000AS1 |
1W PACKAGED POWER PHEMT
|
Filtronic Compound Semicond...
Filtronic Compound Semiconductors
|
