| PART |
Description |
Maker |
| W986432DH-6I W986432DH-7L W986432DH-5 |
Industrial SDRAM
Low Power SDRAM
|
Winbond Electronics
|
| M65KA128AE |
Low Power SDRAM
|
STMicroelectronics
|
| EM6A9325BG-7.5G EM6A9325BG-8G EM6A9325 EM6A9325BG- |
4M x 32 Low Power SDRAM (LPSDRAM)
|
ETRON[Etron Technology, Inc.]
|
| EM6A9325BG-1H/LG |
4M x 32 Low Power SDRAM (LPSDRAM)
|
Etron Technology, Inc.
|
| HYB25L256160AF-7.5 HYE25L256160AF-7.5 |
Very low Power SDRAM optimized for battery-powered, handheld applications
|
Infineon
|
| HYB18L256160BC-7.5 HYE18L256160BC-7.5 HYB18L256160 |
Very low Power SDRAM optimized for battery-powered, handheld applications
|
Infineon
|
| K4S640832 K4S640832F K4S640832F-TL75 K4S640832F-TC |
Advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier 8-SOIC 0 to 70
64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
IC,SDRAM,4X2MX8,CMOS,TSOP,54PIN,PLASTIC
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronics Inc
|
| MT46H16M32LG MT46H32M16LF MT46H32M16LFBF-6ITC MT46 |
512Mb: x16, x32 Mobile Low-Power DDR SDRAM Features
|
Micron Technology
|
| HYS64T128020EML HYS64T128020EML-3.7-B HYS64T128020 |
214-Pin Unbuffered DDR2 SDRAM MicroDIMM Modules Low Power
|
Qimonda AG
|
| K4S643233F-SE K4S643233F-DE K4S643233F-SE_P75 K4S6 |
Dual Low-Noise Precision Rail-To-Rail Operational Amplifier 14-SOIC
2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM
From old datasheet system
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| EP7312-IB-C EP7312-CV-C |
High-performance, low-power system on chip with SDRAM and enchanced digital audio interface
|
Cirrus Logic
|
