PART |
Description |
Maker |
CY62148DV30LL-55ZSXI CY62148DV30LL-55SXI CY62148DV |
4-Mbit (512K x 8) MoBLStatic RAM 512K X 8 STANDARD SRAM, 55 ns, PDSO32 4-Mbit (512K x 8) MoBLStatic RAM 512K X 8 STANDARD SRAM, 70 ns, PDSO32
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Cypress Semiconductor, Corp.
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E28F002BX-B80 E28F002BX-T60 E28F002BX-T80 E28F002B |
5V or Adjustable, Low-Voltage, Step-Up DC-DC Controller 28F200BX - B 2兆位28K的1656K × 8)启动块闪存系列 ACTUATOR, SWITCH, ROUND, LATCH; Approval Bodies:BEAB, VDE, UL, CSA; Diameter, external:29mm; IP rating:65; Operations, mechanical No. of:100000; Temp, op. max:85(degree C); Temp, op. min:-20(degree C) RoHS Compliant: Yes 28F002BX-B - 2-MBIT (128K x 16. 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY 2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY 2-MBIT (128K x 16 / 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY 2-MBIT (128K x 16/ 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
|
http:// Intel, Corp. PROM Intel Corp. Intel Corporation
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IS41C16256-60K IS41LV16256-60K IS41C16256-25TI IS4 |
256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 256K × 164兆位)的动态与江户页面模式内存
|
Integrated Circuit Solu... Cypress Semiconductor Corp. Integrated Circuit Solution Inc
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CY7C1379B-117AC CY7C1379B-117BZC CY7C1379B |
9-Mbit (256K x 32) Flow-through SRAM with NoBL(TM) Architecture 9-Mbit (256K x 32) Flow-through SRAM with NoBL⑩ Architecture 9-Mbit (256K x 32) Flow-through SRAM with NoBL垄芒 Architecture 9-Mbit (256K x 32) Flow-through SRAM with NoBL Architecture
|
Cypress Semiconductor
|
CY7C1355C-117BGC CY7C1355C-117BGI CY7C1355C-117BZC |
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 7.5 ns, PBGA165 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 9兆位56 × 36/512K × 18)流体系结构,通过与总线延迟静态存储器
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Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
CY7C1327G-133AXC CY7C1327G-133AXI CY7C1327G-133BGC |
4-Mbit (256K x 18) Pipelined Sync SRAM 256K X 18 CACHE SRAM, 2.8 ns, PBGA119 4-Mbit (256K x 18) Pipelined Sync SRAM 256K X 18 CACHE SRAM, 2.6 ns, PBGA119 4-Mbit (256K x 18) Pipelined Sync SRAM 256K X 18 CACHE SRAM, 3.5 ns, PBGA119 4-Mbit (256K x 18) Pipelined Sync SRAM(4-Mb (256K x 18)管道式同步SRAM)
|
Cypress Semiconductor, Corp. Cypress Semiconductor Corp.
|
UPD4265805G5-A50-7JD UPD4264805G5-A50-7JD UPD42658 |
18-Mbit QDR-II SRAM 2-Word Burst Architecture 1-Mbit (64K x 16) Static RAM 1M x 4 Static RAM x8 EDO Page Mode DRAM x8 EDO公司页面模式DRAM 4-Mbit (256K x 16) Static RAM
|
NEC TOKIN, Corp.
|
SST39SF010A-45-4I-WH SST39SF020A-45-4I-WH SST39SF0 |
64 Mbit (x16) Multi-Purpose Flash Plus 128K X 8 FLASH 5V PROM, 45 ns, PDSO32 64 Mbit (x16) Multi-Purpose Flash Plus 256K X 8 FLASH 5V PROM, 45 ns, PQCC32 64 Mbit (x16) Multi-Purpose Flash Plus 256K X 8 FLASH 5V PROM, 70 ns, PQCC32 64 Mbit (x16) Multi-Purpose Flash Plus 512K X 8 FLASH 5V PROM, 70 ns, PQCC32 64 Mbit (x16) Multi-Purpose Flash Plus 256K X 8 FLASH 5V PROM, 70 ns, PDIP32 64 Mbit (x16) Multi-Purpose Flash Plus 64兆位(x16)的多功能闪存加
|
Silicon Storage Technology, Inc. PROM SILICON STORAGE TECHNOLOGY INC
|
E28F002BL-T150 28F200BL-TB PA28F200BL-T150 E28F200 |
2-MBIT (128K x 16/ 256K x 8)LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY 2-MBIT (128K x 16 / 256K x 8)LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY 2-MBIT (128K x 16, 256K x 8)LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY 256K X 8 FLASH 12V PROM, 150 ns, PDSO40
|
Intel Corporation Intel Corp. Intel, Corp.
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CY7C1041CV33-15VXC CY7C1041CV33-15VXI CY7C1041CV33 |
4-Mbit (256K x 16) Static RAM 256K X 16 STANDARD SRAM, 12 ns, PDSO44 4-Mbit (256K x 16) Static RAM 256K X 16 STANDARD SRAM, 10 ns, PDSO44
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
CY14B104LA-ZS25XIT CY14B104NA-BA20XI CY14B104NA-BA |
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 512Kb x 8; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: TSOP 512K X 8 NON-VOLATILE SRAM, 25 ns, PDSO44 4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: FBGA
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Cypress Semiconductor, Corp. CYPRESS SEMICONDUCTOR CORP
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