PART |
Description |
Maker |
CY62138EV30LL-45BVXI |
2-Mbit (256K x 8) MoBLStatic RAM
|
Cypress Semiconductor Corp.
|
SST29EE020-120-4C-WH SST29LE020-250-4C-U2 SST29VE0 |
7.3728MHZ CRYSTAL -40/85''C FLUKE-741B 120 REFURBISHED BY NEWARK KJA 79C 79#22 PIN RECP 128Kx8 EEPROM PSoC® Mixed-Signal Array 2 Mbit (256K x8) Page-Mode EEPROM 2兆位256K × 8)页模式的EEPROM 2 Mbit (256K x8) Page-Mode EEPROM 2兆位256K × 8)页模式EEPROM DSUB 13X3 F PCR/A G 50OHM T 2兆位56K × 8)页模式的EEPROM IC SMD AN2135SC CONTROLLER USB 256K X 8 EEPROM 5V, 120 ns, PDSO32 2 Mbit (256K x8) Page-Mode EEPROM 2兆位56K × 8)页模式的EEPROM 2 Mbit (256K x8) Page-Mode EEPROM 2兆位56K × 8)页模式EEPROM
|
Silicon Storage Technology, Inc. SILICON STORAGE TECHNOLOGY INC
|
CY62147DV30L-55BVXE CY62147DV30LL-45BVXI CY62147DV |
4-Mbit (256K x 16) Static RAM 256K X 16 STANDARD SRAM, 45 ns, PDSO44 4-Mbit (256K x 16) Static RAM 256K X 16 STANDARD SRAM, 55 ns, PDSO44 4-Mbit (256K x 16) Static RAM 256K X 16 STANDARD SRAM, 55 ns, PBGA48 4-Mbit (256K x 16) Static RAM 4兆位56K × 16)静态RAM 4-Mbit (256K x 16) Static RAM 256K X 16 STANDARD SRAM, 70 ns, PBGA48
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
A28F400BR-TB A28F400BR-B AB28F400BR-T80 AB28F400BR |
4-MBIT (256K X 16/ 512K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 4-MBIT (256K X 16, 512K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY Toggle Switch; Circuitry:DPDT; Switch Operation:On-On; Contact Current Max:6A; Actuator Style:Bat; Switch Terminals:Through Hole; Current Rating:3A; Leaded Process Compatible:Yes; Mounting Type:PCB; Features:Standard Actuator RoHS Compliant: Yes 4-MBIT (256K X 16. 512K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 4-Mbit (256K x 16, 512K x 8) SmartVoltage boot block flash memory. Access speed 80 ns
|
Intel Corporation Intel Corp.
|
CY14B104NA-ZSP20XCT CY14B104NA-ZSP20XIT CY14B104LA |
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: TSOP 256K X 16 NON-VOLATILE SRAM, 20 ns, PDSO54 4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 512Kb x 8; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: FBGA 4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: FBGA
|
Cypress Semiconductor, Corp. CYPRESS SEMICONDUCTOR CORP
|
CY7C1355C-117BGC CY7C1355C-117BGI CY7C1355C-117BZC |
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 7.5 ns, PBGA165 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 9兆位56 × 36/512K × 18)流体系结构,通过与总线延迟静态存储器
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
UPD4265805G5-A50-7JD UPD4264805G5-A50-7JD UPD42658 |
18-Mbit QDR-II SRAM 2-Word Burst Architecture 1-Mbit (64K x 16) Static RAM 1M x 4 Static RAM x8 EDO Page Mode DRAM x8 EDO公司页面模式DRAM 4-Mbit (256K x 16) Static RAM
|
NEC TOKIN, Corp.
|
SST39SF010A-45-4I-WH SST39SF020A-45-4I-WH SST39SF0 |
64 Mbit (x16) Multi-Purpose Flash Plus 128K X 8 FLASH 5V PROM, 45 ns, PDSO32 64 Mbit (x16) Multi-Purpose Flash Plus 256K X 8 FLASH 5V PROM, 45 ns, PQCC32 64 Mbit (x16) Multi-Purpose Flash Plus 256K X 8 FLASH 5V PROM, 70 ns, PQCC32 64 Mbit (x16) Multi-Purpose Flash Plus 512K X 8 FLASH 5V PROM, 70 ns, PQCC32 64 Mbit (x16) Multi-Purpose Flash Plus 256K X 8 FLASH 5V PROM, 70 ns, PDIP32 64 Mbit (x16) Multi-Purpose Flash Plus 64兆位(x16)的多功能闪存加
|
Silicon Storage Technology, Inc. PROM SILICON STORAGE TECHNOLOGY INC
|
AB28F200BX-T90 A28F200BX-B AB28F200BX-B90 |
2-MBIT (128K x 16/ 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY JT 6C 6#12 PIN RECP A28F200BX-B - 2-MBIT (128K x 16. 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY A28F200BX - B 2兆位28K的1656K × 8)启动块闪存系列 2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
|
http:// Intel Corporation Intel Corp. SCHURTER AG
|
M27C400206 M27C4002-90XN6TR M27C4002 M27C4002-10B1 |
4 Mbit (256Kb x16) UV EPROM and OTP EPROM 256K X 16 UVPROM, 70 ns, CDIP40 256K X 16 OTPROM, 150 ns, PQCC44 256K X 16 OTPROM, 200 ns, PDIP40 256K X 16 UVPROM, 150 ns, CDIP40 256K X 16 OTPROM, 120 ns, PQCC44
|
STMICROELECTRONICS[STMicroelectronics]
|
CY7C1361C-117BGI CY7C1361C-117AXI CY7C1361C-117AXC |
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM 256K X 36 CACHE SRAM, 8.5 ns, PBGA119
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
CY14B104LA-ZS25XIT CY14B104NA-BA20XI CY14B104NA-BA |
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 512Kb x 8; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: TSOP 512K X 8 NON-VOLATILE SRAM, 25 ns, PDSO44 4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: FBGA
|
Cypress Semiconductor, Corp. CYPRESS SEMICONDUCTOR CORP
|