PART |
Description |
Maker |
IRG4CC81KB IRG4CC40RB |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | CHIP 晶体管| IGBT的|正陈| 600V的五(巴西)国际消费电子展|芯片 IRG4CC81KB IGBT Die in Wafer Form
|
International Rectifier
|
IRG4BC20MDS IRG4BC20MD-S IRG4BC20MD-STRR IRG4BC20M |
600V Fast 1-8 kHz Copack IGBT in a D2-Pak package INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=11A) TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 11A I(C) | TO-263AB
|
IRF[International Rectifier]
|
OMD38L60ML OMD75N06ML |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 76A I(C) | M:ML111MW084 30V N-Channel PowerTrench MOSFET
|
|
F15A12GF |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 15A I(C) | TO-247 晶体管| IGBT的|正陈| 1.2KV五(巴西)国际消费电子展|5A一(c)|47
|
Panasonic Industrial Solutions
|
F300R06KF |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 300A I(C) | MODULE-S 晶体管| IGBT的|正陈| 1.2KV五(巴西)国际消费电子展| 300一(c)|模块
|
Vishay Intertechnology, Inc.
|
IRGPC50U |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 55A I(C) | TO-247AC 晶体管| IGBT的|正陈| 600V的五(巴西)国际消费电子展| 55A条一(c)|47AC
|
International Rectifier, Corp.
|
F25A12GF |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 25A I(C) | TO-247VAR 晶体管| IGBT的|正陈| 1.2KV五(巴西)国际消费电子展|5A一(c)|47VAR
|
MEAN WELL Enterprises Co., Ltd.
|
FF75R12KF |
TRANSISTOR | IGBT | N-CHAN | DUAL | 1.2KV V(BR)CES | 75A I(C) | M:HL093HD5.6 晶体管| IGBT的|正陈|双| 1.2KV五(巴西)国际消费电子展| 75A条一(c)|米:HL093HD5.6
|
Infineon Technologies AG
|
HGT1S7N60B3S HGTP7N60B3 HGT1S7N60B3S9A HGTD7N60B3S |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 7A I(C) | TO-263AB 晶体管| IGBT的|正陈| 600V的五(巴西)国际消费电子展|7A一(c)|63AB 14A, 600V, UFS Series N-Channel IGBTs
|
Cypress Semiconductor, Corp. Fairchild Semiconductor
|
GT5J331_SM GT5J311 GT5J331SM GT5J311SM |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 5A I(C) | TO-263AB N CHANNEL IGBT(HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS) N CHANNEL IGBT(HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|