| PART |
Description |
Maker |
| HYB18T256161BF-28 |
256-Mbit x16 DDR2 SDRAM
|
http://
|
| HYB18T256161BF-20 HYB18T256161BF-25 HYB18T256161BF |
256-Mbit x16 DDR2 SDRAM
|
Qimonda AG
|
| HYB18T512161B2F-20/25 |
512-Mbit x16 DDR2 SDRAM
|
Qimonda AG
|
| NAND128W3A2BN6 NAND01BGR3A NAND01BGR3A0AN1T NAND01 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
|
STMICROELECTRONICS[STMicroelectronics]
|
| IS43DR16128 IS43DR16128-3DBI IS43DR16128-3DBL IS46 |
2Gb (x16) DDR2 SDRAM
|
Integrated Silicon Solution, Inc
|
| NAND01GW4A2CZB1 NAND01GW4A2AZB1T NAND512R3A0AN1E N |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆，256兆，512兆位千兆位（x8/x1628 Byte/264字的页面.8V/3V，NAND闪存芯片
|
意法半导
STMicroelectronics N.V.
|
| HYB18T256400AF HYB18T256400AF-3 HYB18T256400AF-37 |
256 Mbi t DDR2 SDRAM
|
INFINEON[Infineon Technologies AG]
|
| NAND01G-A NAND128-A NAND256-A NAND01GR3A0AN1 NAND0 |
128 Mbit / 256 Mbit / 512 Mbit / 1 Gbit (x8/x16) 528 Byte/264 Word Page / 1.8V/3V / NAND Flash Memories
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
|
STMicroelectronics
ST Microelectronics
|
| JS28F256P33BFA 320003 |
NumonyxTM StrataFlash Embedded Memory P33 (256-Mbit, 256-Mbit/256- Mbit) 130nm to 65nm
|
Numonyx B.V
|
| HYB18T256161AFL25 |
256-Mbit x16 GDDR2 DRAM
|
Infineon
|
| HYS72T512420EFA |
240-Pin Fully-Buffered DDR2 SDRAM Modules DDR2 SDRAM RoHS Compliant Products 240针全缓冲DDR2内存模组DDR2 SDRAM的符合RoHS产品
|
Qimonda AG
|
| IS42S16160B IS42S16160B-6T IS42S16160B-7BL IS42S16 |
32MEG X 8, 16MEG X16 256-MBIT SYNCHRONOUS DRAM
|
ISSI[Integrated Silicon Solution, Inc]
|
