| PART |
Description |
Maker |
| HYB18T256161BF-20 HYB18T256161BF-25 HYB18T256161BF |
256-Mbit x16 DDR2 SDRAM
|
Qimonda AG
|
| HYB18T512161B2F HYB18T512161B2F-20_25 |
512-Mbit x16 DDR2 SDRAM
|
Qimonda AG
|
| IS43DR86400B |
512Mb (x8, x16) DDR2 SDRAM
|
Integrated Silicon Solution, Inc
|
| IS43DR81280 |
1Gb (x8, x16) DDR2 SDRAM
|
Integrated Silicon Solution, Inc
|
| IS43DR16128 IS43DR16128-3DBI IS43DR16128-3DBL IS46 |
2Gb (x16) DDR2 SDRAM
|
Integrated Silicon Solution, Inc
|
| NAND01GW4A2CZB1 NAND01GW4A2AZB1T NAND512R3A0AN1E N |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆，256兆，512兆位千兆位（x8/x1628 Byte/264字的页面.8V/3V，NAND闪存芯片
|
意法半导
STMicroelectronics N.V.
|
| HYB18T256400AF HYB18T256400AF-3 HYB18T256400AF-37 |
256 Mbi t DDR2 SDRAM
|
INFINEON[Infineon Technologies AG]
|
| HYB18T256160AF |
256 Mbi t DDR2 SDRAM 256姆吨DDR2内存
|
Infineon Technologies AG
|
| HYS72T512122HFN-3.7-A HYS72T512022HFN-3.7-A |
240-Pin Fully-Buffered DDR2 SDRAM Modules DDR2 SDRAM 512M X 72 DDR DRAM MODULE, PDMA240
|
Qimonda AG
|
| M39832 M39832NE 6468 M39832-B12WNE1T M39832-B12WNE |
Single Chip 8 Mbit (1Mb x8 or 512Kb x16) Flash and 256 Kbit Parallel EEPROM Memory
Single Chip 8 Mbit 1Mb x8 or 512Kb x16 Flash and 256 Kbit Parallel EEPROM Memory
From old datasheet system
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| V58C2256804SC |
256 Mbit DDR SDRAM
|
ProMOS Technologies
|
| IS43R16160A-6T IS43R16160A-5T IS43R16160A-5TL IS43 |
16Meg x 16 256-MBIT DDR SDRAM
|
Integrated Silicon Solution, Inc
|
