| PART |
Description |
Maker |
| JDH2S01T |
UHF Band Mixer
Diode Silicon Epitaxial Schottky Barrier Type UHF Band Mixer
|
Toshiba Corporation
|
| MT6C03AS |
Transistor Silicon NPN Epitaxial Planar Type VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application
|
TOSHIBA
|
| MT6L61AS |
Transistor Silicon NPN Epitaxial Planar Type VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application
|
TOSHIBA
|
| CXA3125N |
All Band TV Tuner IC (VHF-CATV-UHF) 所有带电视调谐器集成电路（甚高频，有线电视，超高频
All Band TV Tuner IC(VHF-CATV-UHF)
|
Sony, Corp.
SONY[Sony Corporation]
|
| BLF2022-70 |
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
UHF power LDMOS transistor
|
Philips Semiconductors
NXP Semiconductors
|
| 2SK3074 EE08686 |
N CHANNEL MOS TYPE (RF POWER MOSFET FOR VHF- AND UHF-BAND POWER AMPLIFIER)
From old datasheet system
RF POWER MOSFET FOR VHF - AND UHF-BAND POWER AMPLIFIER
|
Toshiba Semiconductor
|
| BLF872 BLF872-2015 |
UHF power LDMOS transistor
UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
|
NXP Semiconductors
Quanzhou Jinmei Electro...
|
| UTV120 |
UHF TV 470-860 MHz, Class A, Common Emitter; fO (MHz): 860; P(out) (W): 12; Gain (dB): 8.9; Vcc (V): 26.5; ICQ (A): 1.7; IMD Type (dB): -52; Case Style: 55JT-2 2 CHANNEL, UHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Microsemi, Corp.
|
| BLW34 |
UHF Linear power transistor(UHF 线性功率晶体管) UHF BAND, Si, NPN, RF POWER TRANSISTOR
UHF Linear power transistor(UHF 线性功率晶体管)
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| KDV240E |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR UHF RADIO) 变容二极管外延硅平面二极管（VCO的超高频无线电）
VCO for UHF Band Radio
|
KEC(Korea Electronics)
Korea Electronics (KEC)
|
| GLP-401 |
UHF Band
|
Soshin
|
| KDV239E |
VCO for UHF Band Radio
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR UHF RADIO)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
