| PART |
Description |
Maker |
| MU9C1480B-70TAC MU9C4480B-50TBC MU9C8480B-70TBI |
Content Addressable Memory 内容可寻址存储
8K X 64 CONTENT ADDRESSABLE SRAM, 70 ns, PQFP64
|
NXP Semiconductors N.V.
|
| P1480 |
LAN CAM 1KX64 BIT CMOS CONTENT ADDRESSABLE MEMORY
|
Zarlink Semiconductor Inc.
|
| AM99C10A-10DCB |
256 X 48 CONTENT ADDRESSABLE SRAM, 65 ns, CDIP28
|
ADVANCED MICRO DEVICES INC
|
| DS2406_07 DS2406 DS2406_TR DS2406_ DS2406P DS2406P |
Dual Addressable Switch Plus 1kbit Memory
|
DALLAS[Dallas Semiconductor]
|
| 2333-05-0 2342-12-0 2333-12-0 2332-05-0 2341-12-0 |
Addressable Dual Audio Taper Potentiometer
Addressable Digital Potentiometer
|
Abbatron LLC
General Cable Technologies, Corp.
|
| DM74LS259 74LS259 DM74LS259M DM74LS259N DM74LS259W |
8-Bit Addressable Latches
8-Bit Serial In to Parallel Out Addressable Latches
From old datasheet system
|
FAIRCHILD[Fairchild Semiconductor]
|
| E28F256J3C-110 GE28F256J3C-110 E28F256J3C-115 GE28 |
Intel StrataFlash Memory (J3) 英特StrataFlash存储器（J3
Aluminum Electrolytic Radial Lead Audio Grade Capacitor; Capacitance: 2200uF; Voltage: 10V; Case Size: 10x20 mm; Packaging: Bulk 英特尔StrataFlash存储器（J3
Intel StrataFlash Memory (J3) 16M X 16 FLASH 2.7V PROM, 125 ns, PDSO56
Intel StrataFlash Memory (J3) 英特尔StrataFlash存储器（J3
Intel StrataFlash Memory (J3) 8M X 16 FLASH 3V PROM, 150 ns, PDSO56
Intel StrataFlash Memory (J3) 8M X 16 FLASH 2.7V PROM, 120 ns, PBGA64
(TE28FxxxJ3C) Strata Flash Memory
Strata Flash Memory / 256 Mbit
|
Intel, Corp.
Intel Corp.
http://
Intel Corporation
|
| LND-BA1K |
ADDRESSABLE BIOSENSOR ARRAYS
|
Linear Dimensions Semiconductor
|
| HD74HC259 |
8-bit Addressable Latch
|
HITACHI[Hitachi Semiconductor]
|
| 74HC259 74HC259DB 74HCT259DB 74HCT259BQ 74HC259BQ |
8-bit addressable latch
|
NXP Semiconductors
|
| TC4099BP TC4099BF |
8-Bit Addressable Latch
|
Toshiba Semiconductor
|
| TC74HC259AP07 TC74HC259AF TC74HC259AFN TC74HC259AP |
8-Bit Addressable Latch
|
Toshiba Semiconductor
|
