| PART |
Description |
Maker |
| IRG4BC20FD-S IRG4BC20FD-STRL |
600V Fast 1-8 kHz Discrete IGBT in a D2-Pak package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.66V, @Vge=15V, Ic=9.0A) 绝缘栅双极型晶体管，超快软恢复二极管VCES和\u003d 600V电压的Vce（on）典\u003d 1.66V，@和VGE \u003d 15V的，集成电路\u003d 9.0,9.0
CAP 0.01UF 25V 10% X7R SMD-0508 TR-7 PLATED-NI/SN 绝缘栅双极型晶体管，超快软恢复二极管（VCES和\u003d 600V电压的Vce（on）典\u003d 1.66V，@和VGE \u003d 15V的，集成电路\u003d 9.0,9.0
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRG4BC20K |
600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9.0A) 绝缘栅双极晶体管VCES和\u003d 600V电压的Vce（on）典\u003d 2.27V，@和VGE \u003d 15V的，集成电路\u003d 9.0,9.0
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRFR420APBF |
HEXFET Power MOSFET ( VDSS = 500V , RDS(on) max = 3.0, ID = 3.3A ) HEXFET功率MOSFET（减振钢板基本\u003d 500V及的RDS（on）最大值\u003d 3.0ヘ，身份证\u003d 3.3A
|
International Rectifier, Corp.
|
| IRG4RC10SD IRG4RC10SDTR IRG4RC10SDTRL IRG4RC10SDTR |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, Ic=2.0A) 绝缘栅双极型晶体管，超快软恢复二极管（VCES和\u003d 600V电压的Vce（on）典\u003d 1.10V，@和VGE \u003d 15V的，集成电路\u003d 2.0安培
600V DC-1 kHz (Standard) Copack IGBT in a D-Pak package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRFN250 |
POWER MOSFET N-CHANNEL(BVdss=200V, Rds(on)=0.100ohm, Id=27.4A) 功率MOSFET N沟道BVdss \u003d 200V的电压，的Rds（on）\u003d 0.100ohm，身份证\u003d 27.4A
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRFP440 |
Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.8A) 功率MOSFET（减振钢板基本\u003d 500V及的Rdson）\u003d 0.85ohm，身份证\u003d 8.8A
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRFN140 |
POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.077ohm, Id=28A) 功率MOSFET N沟道BVdss \u003d 100V的，的Rds（on）\u003d 0.077ohm，身份证\u003d 28A条）
|
International Rectifier, Corp.
|
| IRG4BC20UDS IRG4BC20UD-S IRG4BC20UD-STRR IRG4BC20U |
320 x 240 pixel format, LED or CFL Backlight 绝缘栅双极型晶体管，超快软恢复二极管（VCES和\u003d 600V电压的Vce（on）典\u003d 1.85V，@和VGE \u003d 15V的，集成电路\u003d 6.5A
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 6.5A I(C) | TO-263AB
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=6.5A)
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRGBC30MD2-S |
Aluminum Polymer SMT Capacitor; Capacitance: 470uF; Voltage: 4V; Case Size: 10x8 mm; Packaging: Tape & Reel 绝缘栅双极型晶体管，超快软恢复二极管（VCES和\u003d 600V的，@和VGE \u003d 15V的，集成电路\u003d 16A条）
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, @Vge=15V, Ic=16A)
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRFBC40AS IRFBC40ASTRL IRFBC40ASTRR |
600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=600V, Rds(on)max=1.2ohm, Id=6.2A) 功率MOSFET（减振钢板基本\u003d 600V电压的Rds（on）最大值\u003d 1.2ohm，身份证\u003d 6.2A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
