| PART |
Description |
Maker |
| PE3240 PE3240EK 3240-11 3240-12 3240-00 |
2.2 GHz UltraCMOS⑩ Integer-N PLL for Low Phase Noise Applications
2.2 GHz UltraCMOSInteger-N PLL for Low Phase Noise Applications
2.2 GHz UltraCMOS Integer-N PLL for Low Phase Noise Applications
|
PEREGRINE[Peregrine Semiconductor Corp.]
|
| ADF4196BCPZ ADF4196BCPZ-RL7 EVAL-ADF4193EBZ2 EVAL- |
Low Phase Noise, Fast Settling, 6 GHz
|
Analog Devices
|
| PE83336EK 83336-00 83336-21 83336-22 PE83336 |
3.0 GHz Integer-N PLL for Low Phase Noise Applications
|
PEREGRINE[Peregrine Semiconductor Corp.]
|
| HMC606 |
GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz
|
HITTITE[Hittite Microwave Corporation]
|
| AMMC-5023 |
AMMC-5023 · 23 GHz Low Noise Amplifier
23 GHz Low Noise Amplifier (21.2-26.5 GHz)
|
Agilent (Hewlett-Packard)
Agilent(Hewlett-Packard)
|
| ATF-10236 ATF-10236-STR ATF-10236-TR1 ATF10236 |
ER 2C 2#16S PIN RECP BOX
0.5?12 GHz Low Noise Gallium Arsenide FET
0.5-12 GHz Low Noise Gallium Arsenide FET
0.512 GHz Low Noise Gallium Arsenide FET
|
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
|
| PE3340 PE3340EK 3340-00 3340-11 3340-12 |
3.0 GHz Integer-N PLL for Low Phase Noise Applications
|
Peregrine Semiconductor...
PEREGRINE[Peregrine Semiconductor Corp.]
|
| ST-4 |
MINI-NOISE DIODES 10 KHZ TO 3 GHZ
0.00001 GHz - 3 GHz, SILICON, NOISE DIODE
|
Micronetics, Inc.
|
| TLT-8-2014 TLT-8-2013 |
Temperature Compensated Low Noise Amplifier 2 GHz - 8 GHz
|
TELEDYNE[Teledyne Technologies Incorporated]
|
| TMT-4-0503 |
Temperature Compensated Low Noise Amplifier 0.5 GHz - 4 GHz
|
TELEDYNE[Teledyne Technologies Incorporated]
|
| TLT-13-6013 |
Temperature Compensated Low Noise Amplifier 6 GHz - 13 GHz
|
TELEDYNE[Teledyne Technologies Incorporated]
|
