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VP1008L - P-Channel Enhancement-Mode MOSFET Transistor(最小漏源击穿电100V,夹断电0.28A的P沟道增强型MOSFET) P通道增强型MOSFET晶体管(最小漏源击穿电 100V的,夹断电流.28A的P沟道增强型MOSFET的)

VP1008L_3535472.PDF Datasheet

 
Part No. VP1008L
Description P-Channel Enhancement-Mode MOSFET Transistor(最小漏源击穿电100V,夹断电0.28A的P沟道增强型MOSFET) P通道增强型MOSFET晶体管(最小漏源击穿电 100V的,夹断电流.28A的P沟道增强型MOSFET的)

File Size 90.66K  /  4 Page  

Maker

Vishay Intertechnology, Inc.



JITONG TECHNOLOGY
(CHINA HK & SZ)
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Part: VP13065-4
Maker: VLSI
Pack: PLCC
Stock: 520
Unit price for :
    50: $7.51
  100: $7.14
1000: $6.76

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 Full text search : P-Channel Enhancement-Mode MOSFET Transistor(最小漏源击穿电100V,夹断电0.28A的P沟道增强型MOSFET) P通道增强型MOSFET晶体管(最小漏源击穿电 100V的,夹断电流.28A的P沟道增强型MOSFET的)
 Product Description search : P-Channel Enhancement-Mode MOSFET Transistor(最小漏源击穿电100V,夹断电0.28A的P沟道增强型MOSFET) P通道增强型MOSFET晶体管(最小漏源击穿电 100V的,夹断电流.28A的P沟道增强型MOSFET的)


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