| PART |
Description |
Maker |
| BC807 |
High current application
|
http://
KODENSHI KOREA CORP.
|
| 2SK2746 |
High Speed,High Current Switching Application N Channel MOSFET(高速大电流转换 N沟道 MOS场效应管) 高速，大电流开关应用N沟道MOSFET（高速大电流转换沟道马鞍山场效应管）
|
Toshiba, Corp.
|
| 2SD1802 |
HIGH CURRENT SWITCHING APPLICATION
|
UTC
|
| 2SD1624 2SD1624L-X-AB3-R 2SD1624G-X-AB3-R 2SD16241 |
HIGH CURRENT SWITCHING APPLICATION
|
Unisonic Technologies
|
| XFSDR54-100 XFSDR54-101 XFSDR54-120 XFSDR54-150 XF |
LOW PROFILE SMD TYPE FOR HIGH CURRENT APPLICATION
|
XFMRS Inc.
|
| 2SC3440 |
HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corporation
ETC[ETC]
|
| 2SA2167 |
FOR HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| 2SC6053 |
FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| INA5005AC1 |
FOR HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| 2SC4357 |
FOR HIGH CURRENT DRIVE AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
|
ISAHAYA[Isahaya Electronics Corporation]
|
| HCF |
Solid State, Thin Film, SMD 3220 Fuse for High Current Application
|
Schurter Inc.
|
| 2SC6120 2SC612010 |
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
