PART |
Description |
Maker |
IXBH6N170 |
High Voltage, High Gain BIMOSFETMonolithic Bipolar MOS Transistor 12 A, 1700 V, N-CHANNEL IGBT, TO-247
|
IXYS, Corp.
|
IXGH24N60C4D1 |
High-Gain IGBT w/ Diode
|
IXYS Corporation
|
AGB3307 AGB3307S24Q1 |
The AGB3307 is one of a series of high performance InGaP HBT amplifiers designed for use in applications requiring high linearity, ... Gain Block Amplifiers 50-ohm High Linearity Low Noise Wideband Gain Block
|
Anadigics Inc ANADIGICS[ANADIGICS, Inc]
|
2SC1622 2SC1622A 2SC1622A-T2B 2SC1622A-L 2SC1622A- |
Low-frequency high-gain amplification silicon Tr. AUDIO FREQUENCY HIGH GAIN AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD
|
NEC[NEC]
|
IXGH50N60B2 IXGT50N60B2 |
IGBT Discretes: Mid-Frequency Range (15KHz-40KHz) Types Single IGBT HiPerFASTTM IGBT B2-Class High Speed IGBTs
|
IXYS Corporation
|
MG600Q1US65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
|
TOSHIBA
|
SGF23N60UFD SGF23N60UFDTU |
240 x 320 pixel format (Portrait Mode), CFL Backlight available with power harness 23 A, 600 V, N-CHANNEL IGBT Ultra-Fast IGBT Discrete, High Performance IGBT
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
IXGH25N100 IXGH25N100A IXGM25N100A IXGM25N100 |
Low VCE(sat), High speed IGBT 50 A, 1000 V, N-CHANNEL IGBT, TO-247AD Low V High speed IGBT
|
IXYS, Corp. IXYS[IXYS Corporation]
|
LD7126 LD7126SERIES |
DBS-Band, 2.0KW/2.4KW Klystrons for Communications 17 GHz BAND, 2.0 kW/2.4 kW, HIGH EFFICIENCY, HIGH POWER GAIN 17 GHz BAND / 2.0 kW/2.4 kW / HIGH EFFICIENCY / HIGH POWER GAIN
|
NEC[NEC] NEC Corp.
|
AGB3304 AGB3304_REV_0.0 AGB3304S24Q1 |
50 High IP3 Low Noise Wideband Gain Block Gain Block Amplifiers From old datasheet system 50з High IP3 Low Noise Wideband Gain Block
|
ANADIGICS[ANADIGICS, Inc]
|