| PART |
Description |
Maker |
| RJK0653DPB RJK0653DPB-00-J5 RJK0653DPB-13 |
60V, 45A, 4.8m max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| RJK0455DPB RJK0455DPB13 RJK0455DPB-00-J5 |
40V, 45A, 3.8m max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| 2SK1611 |
V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplification
Silicon N-Channel Power F-MOS FET
|
Panasonic Semiconductor
http://
|
| 2SJ178 2SJ178-T 2SJ178-T/JD 2SJ178-T/JM |
P-channel power MOS FET
P-CHANNEL MOS FET FOR HIGH SPEED SWITCHING
|
NEC[NEC]
|
| IRFU220B IRFR220B IRFU220BTLTUFP001 IRFU220BTUFP00 |
200V N-Channel B-FET / Substitute of IRFR220 & IRFR220A
200V N-Channel B-FET / Substitute of IRFU220 & IRFU220A
200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| 2SK2054 |
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
MOS Field Effect Transistor
|
NEC[NEC]
|
| APT20M11JVFR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 175A 0.011 Ohm
|
Advanced Power Technology
|
| APT20M40BVR |
POWER MOS V 200V 59A 0.040 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT20M19JVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 112A 0.019 Ohm
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| 2SK2070 |
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING N沟道场效应晶体管的高速开
MOS Field Effect Transistor
|
NEC, Corp.
NEC[NEC]
|
| APT20M42HVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 200V 50A 0.042 Ohm
|
Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
|
