| PART |
Description |
Maker |
| IDT72521L40G IDT72521L40JB IDT72521L50JB |
PARALLEL BIDIRECTIONAL FIFO 512 x 18 & 1024 x 18
PARALLEL BIDIRECTIONAL FIFO 512 x 18 & 1024 x 18 双向并行FIFO12 × 18
PARALLEL BIDIRECTIONAL FIFO 512 x 18 & 1024 x 18 2K X 18 BI-DIRECTIONAL FIFO, 40 ns, CPGA68
|
Integrated Device Techn...
Integrated Device Technology, Inc.
|
| IDT72211L12J IDT72201L20L |
CMOS SyncFIFO 64 X 9, 256 x 9, 512 x 9, 1024 X 9, 2048 X 9 and 4096 x 9 512 X 9 OTHER FIFO, PQCC32
CMOS SyncFIFO 64 X 9, 256 x 9, 512 x 9, 1024 X 9, 2048 X 9 and 4096 x 9 256 X 9 OTHER FIFO, CQCC32
|
Integrated Device Technology, Inc.
|
| SST39LF010-45-4C-B3KE SST39LF010-45-4C-MM SST39LF0 |
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
|
SST[Silicon Storage Technology, Inc]
|
| IDT72201L20J IDT72201L20JB IDT72211L20J IDT72211L2 |
CMOS SyncFIFO 64 X 9, 256 x 9, 512 x 9, 1024 X 9, 2048 X 9 and 4096 x 9
CMOS SyncFIFOO 64 X 9 256 x 9 512 x 9 1024 X 9 2048 X 9 and 4096 x 9
CMOS SyncFIFOO 64 X 9, 256 x 9, 512 x 9, 1024 X 9, 2048 X 9 and 4096 x 9
|
IDT[Integrated Device Technology]
|
| M36P0R9060E0 |
512 Mbit Flash memory 64 Mbit (Burst) PSRAM
|
Numonyx
|
| M36P0R9060N0 |
512 Mbit Flash memory 64 Mbit (Burst) PSRAM
|
Numonyx
|
| SST27SF010-70-3C-NHE SST27SF010-70-3C-PHE SST27SF0 |
512 Kbit / 1 Mbit / 2 Mbit (x8) Many-Time Programmable Flash
|
SST[Silicon Storage Technology, Inc]
|
| M58PR512LE M58PR512LE96ZB5 M58PR256LE96ZB5 M58PR00 |
256-Mbit, 512-Mbit or 1-Gbit (】 16, multiple bank, multilevel, burst) 1.8 V supply Flash memories
|
STMicroelectronics
|
| CY7C1354CV25-166AXC CY7C1356CV25-166AXC CY7C1354CV |
9-Mbit (256 K 36/512 K 18) Pipelined SRAM with NoBLArchitecture
9-Mbit (256 K × 36/512 K × 18) Pipelined SRAM with NoBL Architecture
|
Cypress Semiconductor
|
| IDT72215 IDT72215LB IDT72215LB15G IDT72215LB15GB I |
CMOS SyncFIFOO 256 x 18, 512 x 18, 1024 x 18, 2048 x 18 and 4096 x 18
CMOS SyncFIFOO 256 x 18 512 x 18 1024 x 18 2048 x 18 and 4096 x 18
|
IDT[Integrated Device Technology]
|
| IDT72221L15J IDT72221L15JI IDT72221L15PF IDT72221L |
CMOS SyncFIFOO 64 X 9, 256 x 9, 512 x 9, 1024 X 9, 2048 X 9 and 4096 x 9
|
IDT[Integrated Device Technology]
|
| IS23SC4418 IS23SC4428 |
1024 x 8 Bits of EEPROM With Programmable Write Protection For Each Byte.(1024 x 8位，每个字节带可编程写保护的EEPROM) 1024 × 8位的EEPROM，具有可编程写保护每个字节。（1024 × 8位，每个字节带可编程写保护的EEPROM中）
1024 x 8 Bits of EEPROM With Programmable Write Protection For Each Byte And Two Bytes of Programmable Security Code(1024 x 8位，每个字节带可编程写保护，2字节可编程安全密码的EEPROM) 1024 × 8位的EEPROM，具有可编程写保护对于每一个字节，两个字节可编程保障法024 × 8位，每个字节带可编程写保护，2字节可编程安全密码的EEPROM中）
|
GTM, Corp.
Integrated Silicon Solution, Inc.
|
