| PART |
Description |
Maker |
| HY27US16281A |
(HY27USxx281A) 128Mbit (16Mx8bit / 8Mx16bit) NAND Flash Memory
|
Hynix Semiconductor
|
| KM416S8030B KM416S8030BT-G_F8 KM416S8030BT-G_FH KM |
128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4S280432C-TC_L1H K4S280432C K4S280432C-TC_L1L K4S |
128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM米4位4银行同步DRAM LVTTL
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
|
| K4S280432A-TC_L75 K4S280432A-TC_L80 K4S280432A-TC/ |
128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM米4位4银行同步DRAM LVTTL
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
|
| K4R271669F |
128Mbit RDRAM(F-die)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| GE28F256L18B85 GE28F256L18T85 GE28F128L18T85 PH28F |
1.8V, 85ns, 256Mbit StrataFlash Wireless Memory
1.8V, 85ns, 128Mbit StrataFlash Wireless Memory
1.8V, 85ns, 128Mbit lead-free StrataFlash Wireless Memory
|
Intel
|
| HYB25D128160CT-6 HYB25D128160CT-5 HYB25D128160CE-5 |
128Mbit Double Data Rate (DDR) Components
|
Infineon
|
| HY27US08281A HY27US08282A HY27US16281A HY27US16282 |
128Mbit (16Mx8bit / 8Mx16bit) NAND Flash Memory
|
Hynix Semiconductor
|
| M36L0T7050B0 M36L0T7050T0 |
(M36L0T7050T0 / M36L0T7050B0) 128Mbit Flash Memory 32Mbit PSRAM
|
STMicroelectronics
|
| V54C3128404VT |
128Mbit SDRAM 3.3 VOLT, TSOP II / SOC PACKAGE 8M X 16, 16M X 8, 32M X 4
|
Mosel Vitelic Corp
|
| M58LT128GST1ZA5E M58LT128GST1ZA5F M58LT128GS M58LT |
128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
|
STMICROELECTRONICS[STMicroelectronics]
|
