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K7Q161882A - (K7Q161882A / K7Q161882A) 512Kx36 & 1Mx18 QDR b2 SRAM

K7Q161882A_3723817.PDF Datasheet

 
Part No. K7Q161882A
Description (K7Q161882A / K7Q161882A) 512Kx36 & 1Mx18 QDR b2 SRAM

File Size 383.93K  /  17 Page  

Maker


Samsung semiconductor



JITONG TECHNOLOGY
(CHINA HK & SZ)
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Part: K7Q161854A-FC16
Maker: SAMSUNG
Pack: BGA
Stock: Reserved
Unit price for :
    50: $11.08
  100: $10.52
1000: $9.97

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Homepage http://www.samsung.com/Products/Semiconductor/
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 Related Part Number
PART Description Maker
CY7C1372CV25-167AI CY7C1372CV25-167BGI CY7C1372CV2 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 12k × 36/1M × 18流水线的SRAM架构的总线延迟
CAP,Ceramic,10000pF,500VDC,10-% Tol,10% Tol,X7R-TC Code,-15,15%-TC,30ppm-TC RoHS Compliant: Yes
512K x 36/1M x 18 Pipelined SRAM with NoBL Architecture
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
MBM29LV004TC-12 MBM29LV004TC-90PNS MBM29LV004TC-70 4M (512K X 8) BIT 512K X 8 FLASH 3V PROM, 120 ns, PDSO40
4M (512K X 8) BIT 512K X 8 FLASH 3V PROM, 70 ns, PDSO40
4M (512K X 8) BIT 512K X 8 FLASH 3V PROM, 90 ns, PDSO40
IC, LN PWR DC2DC CONVERT 48VDC-5VDC 1.2A MFR
4M (512K X 8) BIT
FUJITSU LTD
Fujitsu, Ltd.
Fujitsu Limited
Fujitsu Component Limited.
CY7C1049CV33 CY7C1049CV33-15ZXC CY7C1049CV33-10VC 4-Mbit (512K x 8) Static RAM
512K x 8 Static RAM 512K X 8 STANDARD SRAM, 15 ns, PDSO36
512K x 8 Static RAM 512K X 8 STANDARD SRAM, 15 ns, PDSO44
512K x 8 Static RAM 12k × 8静态RAM
512K x 8 Static RAM 512K X 8 STANDARD SRAM, 12 ns, PDSO44
CYPRESS[Cypress Semiconductor]
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
79LV0408XPFK-20 79LV0408XPFI-20 79LV0408XPFH-20 79 Low Voltage 4 Megabit (512k x 8-bit) EEPROM 512K X 8 EEPROM 3V, 250 ns, PDFP40
Low Voltage 4 Megabit (512k x 8-bit) EEPROM 512K X 8 EEPROM 3V, 200 ns, PDFP40
IC LOGIC 3245 OCTAL FET BUS SWITCH -40 85C QSOP-20 55/TUBE 512K X 8 EEPROM 3V, 250 ns, PDFP40
Maxwell Technologies, Inc
IDT71V65703 IDT71V65903 IDT71V65703S85PF IDT71V657 3.3V 256K x 36 ZBT Synchronous 3.3V I/O Flowthrough SRAM
256K x 36 512K x 18 3.3V Synchronous ZBT SRAMs
256K x 36, 512K x 18 3.3V Synchronous ZBT? SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 7.5 ns, PBGA165
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 8 ns, PQFP100
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 7.5 ns, PBGA119
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 256K × 3612K采样× 18 3.3同步ZBT SRAM
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 8.5 ns, PBGA165
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 7.5 ns, PQFP100
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 8.5 ns, PBGA119
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 256K X 36 ZBT SRAM, 7.5 ns, PQFP100
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 256K X 36 ZBT SRAM, 7.5 ns, PBGA165
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
MX26C4000BTI-90 MX26C4000BQI-15 MX26C4000BQI-10 MX 4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 512K X 8 FLASH 12V PROM, 120 ns, PDSO32
4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 512K X 8 FLASH 12V PROM, 120 ns, PQCC32
4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 512K X 8 FLASH 12V PROM, 90 ns, PQCC32
4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 512K X 8 FLASH 12V PROM, 90 ns, PDIP32
Switch Actuator; For Use With:18 Series Switches; Accessory Type:Spring Lever Actuator RoHS Compliant: Yes
IC DRIVER 1/2BRDG LOW SIDE 16DIP
DIODE SCHTTKY 150V 2X30A TO247AD
Macronix International Co., Ltd.
TC55VD1636FF-133 512K Word x 36 Bit Synchronous No-turnround Static RAM(512K 字x36位同步无转向静RAM)
Toshiba Corporation
A28F400BX-B 4-MBIT (512K x8) Boot Block Flash Memory(4兆位(512K x8) 引导块闪速存储器)
Intel Corp.
CY62157EV18LL-55BVXI 8-Mbit (512K x 16) Static RAM 512K X 16 STANDARD SRAM, 55 ns, PBGA48
Cypress Semiconductor, Corp.
MSM8521CBI-48D MSM8521CBI-020 MSM8521CB-020 MSM851 512K X 8 STANDARD SRAM, 20 ns, PBGA48
512K x 8 Static RAM Issue 5.2 April 2001
MOSAIC
http://
MX27C8111 MX27C8111MC-10 MX27C8111MC-12 MX27C8111M 8M-BIT [1M x8/512K x16] CMOS OTP ROM WITH PAGE MODE 512K X 16 OTPROM, 90 ns, PDIP42
Macronix International Co., Ltd.
MCNIX[Macronix International]
CY62148-55 CY62148-70 CY62148L-55SC 512K x 8 Static RAM 512K X 8 STANDARD SRAM, 55 ns, PDSO32
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
 
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