| PART |
Description |
Maker |
| RA08H1317M10 |
135-175MHz 8W 12.5V, 2 stage Amp. For PORTABLE RADIO
|
Mitsubishi Electric Semiconductor
|
| RA60H1317M10 |
135-175MHz 60W 12.5V, 3 Stage Amp. For MOBILE RADIO
|
Mitsubishi Electric Semiconductor
|
| RA30H1317M-101 |
RoHS Compliance , 135-175MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO
RoHS Compliance , 135-175MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO
Broadband Frequency Range
|
Mitsubishi Electric Sem...
|
| RA30H1317M_06 RA30H1317M RA30H1317M-101 RA30H1317M |
RoHS Compliance , 135-175MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| RA30H1317M111 RA30H1317M1-201 |
RoHS Compliance, 135-175MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO
|
Mitsubishi Electric Semiconductor
|
| RA60H1317M_06 RA60H1317M RA60H1317M-101 RA60H1317M |
RoHS Compliance ,135-175MHz 60W 12.5V, 3 Stage Amp. For MOBILE RADIO
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| RA60H1317M RA60H1317M-101 RA60H1317M11 |
RoHS Compliance , 135-175MHz 60W 12.5V, 3 Stage Amp. For MOBILE RADIO
Broadband Frequency Range
|
Mitsubishi Electric Semiconductor
Mitsubishi Electric Sem...
|
| M67781 M67781H |
135-160MHz / 12.5V / 40W / FM MOBILE RADIO
RF POWER MODULE 150-175MHz, 12.5V, 40W, FM MOBILE RADIO
|
Mitsubishi Electric Corporation
|
| D1001UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(20W-28V-175MHz,Single Ended)(镀金多用DMOS射频硅场效应20W-28V-175MHz,单端))
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W - 28V - 175MHz SINGLE ENDED
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| M68702L 68702L |
135-160MHz / 12.5V / 60W / FM MOBILE RADIO
From old datasheet system
RF POWER MODULE 135-160MHz, 12.5V, 60W, FM MOBILE RADIO
|
Mitsubishi Electric Semiconductor
Mitsubishi Electric Corporation
|
