| PART |
Description |
Maker |
| K7N321831C K7N323631C-QI160 K7N323631C-EC160 K7N32 |
1Mx36 & 2Mx18 Pipelined NtRAM
1M X 36 ZBT SRAM, 3.5 ns, PQFP100
1M X 36 ZBT SRAM, 3.5 ns, PBGA165
1M X 36 ZBT SRAM, 2.6 ns, PQFP100
|
Samsung semiconductor
|
| CY7C1356A-166AC CY7C1354A-133BGCT |
512K X 18 ZBT SRAM, 3.6 ns, PQFP100
256K X 36 ZBT SRAM, 4.2 ns, PBGA119
|
CYPRESS SEMICONDUCTOR CORP
|
| AS7C33128NTF32_36B AS7C33128NTF36B-80TQIN AS7C3312 |
3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD 128K X 36 ZBT SRAM, 8 ns, PQFP100
3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD 128K X 32 ZBT SRAM, 7.5 ns, PQFP100
Cap-Free, NMOS, 150mA Low Dropout Regulator with Reverse Current Protection 128K X 36 ZBT SRAM, 10 ns, PQFP100
3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD 128K X 36 ZBT SRAM, 10 ns, PQFP100
3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD 128K X 36 ZBT SRAM, 7.5 ns, PQFP100
3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD 128K X 32 ZBT SRAM, 10 ns, PQFP100
LM194/LM394 Supermatch Pair; Package: TO-99; No of Pins: 6; Qty per Container: 500; Container: Box 128K X 36 ZBT SRAM, 7.5 ns, PQFP100
LM195/LM395 Ultra Reliable Power Transistors; Package: TO-220; No of Pins: 3; Qty per Container: 45; Container: Rail
LM392 Low Power Operational Amplifier/Voltage Comparator; Package: SOIC NARROW; No of Pins: 8; Qty per Container: 95; Container: Rail
3.3V 128K × 32/36 Flowthrough Synchronous SRAM with NTDTM
LM3916 Dot/Bar Display Driver; Package: MDIP; No of Pins: 18; Qty per Container: 20; Container: Rail
LM392 Low Power Operational Amplifier/Voltage Comparator; Package: MDIP; No of Pins: 8; Qty per Container: 40; Container: Rail
NTD? Sync SRAM - 3.3V
|
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
|
| GS8320ZV36T-200 GS8320ZV36T-133 GS8320ZV36T-133I G |
36Mb Pipelined and Flow Through Synchronous NBT SRAMs 2M X 18 ZBT SRAM, 6.5 ns, PQFP100
1M X 36 ZBT SRAM, 7 ns, PQFP100 TQFP-100
|
GSI Technology, Inc.
http://
|
| IS61NVF102418-6.5B2 IS61NVF25672-6.5B1 IS61NVF5123 |
1M X 18 ZBT SRAM, 6.5 ns, PBGA119 14 X 22 MM, PLASTIC, BGA-119
256K X 72 ZBT SRAM, 6.5 ns, PBGA209 14 X 22 MM, 1 MM PITCH, PLASTIC, BGA-209
512K X 36 ZBT SRAM, 6.5 ns, PBGA119 14 X 22 MM, PLASTIC, BGA-119
256K X 72 ZBT SRAM, 7.5 ns, PBGA209
|
Integrated Silicon Solution, Inc.
INTEGRATED SILICON SOLUTION INC
|
| IS61NP25618-100B IS61NP25618-100B2 IS61NP25618-100 |
256K X 18 ZBT SRAM, 5 ns, PBGA119 PLASTIC, BGA-119
256K X 18 ZBT SRAM, 5 ns, PQFP100
|
MERITEK Electronics, Corp.
Integrated Silicon Solution, Inc.
INTEGRATED SILICON SOLUTION INC
|
| MT55L512Y32F MT55V512Y36F MT55L1MY18F MT55V512V36F |
16Mb: 512K x 32，Flow-Through ZBT SRAM(16Mb流通式同步静态存储器)
16Mb: 512K x 36，Flow-Through ZBT SRAM(16Mb流通式同步静态存储器)
16Mb: 1 Meg x 18, Flow-Through ZBT SRAM(16Mb流通式同步静态存储器)
16Mb: 512K x 36锛?low-Through ZBT SRAM(16Mb娴??寮??姝ラ?????ㄥ?)
|
Micron Technology, Inc.
|
| AS7C33256NTF32_36A AS7C33256NTF32-36A.V.1.1 AS7C33 |
3.3V 256K x 2/36 Flowthrough Synchronous SRAM with NTD 256K X 32 ZBT SRAM, 8.5 ns, PQFP100
3.3V 256K x 2/36 Flowthrough Synchronous SRAM with NTD 256K X 32 ZBT SRAM, 10 ns, PQFP100
3.3V 256K x 2/36 Flowthrough Synchronous SRAM with NTD 256K X 36 ZBT SRAM, 8.5 ns, PQFP100
3.3V 256K x 2/36 Flowthrough Synchronous SRAM with NTD 256K X 36 ZBT SRAM, 7.5 ns, PQFP100
DIODE ZENER SINGLE 1000mW 24Vz 10.5mA-Izt 0.05 5uA-Ir 18.2Vr DO41-GLASS 5K/REEL
DIODE ZENER SINGLE 1000mW 36Vz 7mA-Izt 0.05 5uA-Ir 27.4Vr DO41-GLASS 5K/REEL
From old datasheet system
NTD? Sync SRAM - 3.3V
|
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
|
| MT55L128L32P1 MT55L256V18P1 MT55L256L18P1 MT55L128 |
3.3V I/O28K x 32，Flow-Through ZBT SRAM(3.3V输入/输出,4Mb流通式同步静态存储器)
2.5V I/O56K x 18,Flow-Through ZBT SRAM(2.5V输入/输出,4Mb流通式同步静态存储器)
3.3V I/O56K x 18,Flow-Through ZBT SRAM(3.3V输入/输出,4Mb流通式同步静态存储器) 3.3V的I / O56 × 18，流量通过ZBT SRAM的电压（3.3V输入/输出Mb的流通式同步静态存储器
3.3V I/O28K x 36，Flow-Through ZBT SRAM(3.3V或输输出,4Mb流通式同步静态存储器) 3.3V的I / O28K的36，流量通过ZBT SRAM的电压（3.3V或输输出Mb的流通式同步静态存储器
2.5V I/O28K x 32，Flow-Through ZBT SRAM(2.5V输入/输出,4Mb流通式同步静态存储器) 2.5VI / O28K的32，流量通过ZBT SRAM的电压（2.5V输入/输出Mb的流通式同步静态存储器
|
Micron Technology, Inc.
|
| MT55L512V18FF-11 MT55L512V18FF-12 MT55L256L36FT-10 |
512K X 18 ZBT SRAM, 8.5 ns, PBGA165
512K X 18 ZBT SRAM, 9 ns, PBGA165
256K X 36 ZBT SRAM, 7.5 ns, PQFP100
256K X 36 ZBT SRAM, 8.5 ns, PQFP100
256K X 36 ZBT SRAM, 8.5 ns, PBGA165
|
CYPRESS SEMICONDUCTOR CORP
|
| GS8321Z36E-166VT GS8321Z32E-166VT GS8321Z32GE-166V |
1M X 36 ZBT SRAM, 7 ns, PBGA165 15 X 17 MM, 1 MM PITCH, FPBGA-165
1M X 32 ZBT SRAM, 7 ns, PBGA165 15 X 17 MM, 1 MM PITCH, FPBGA-165
1M X 32 ZBT SRAM, 7 ns, PBGA165 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165
2M X 18 ZBT SRAM, 6.5 ns, PBGA165
|
GSI Technology, Inc.
|
| IDT71V3557S75PF IDT71V3557S85PF IDT71V3557S80PF ID |
128K x 36, 256K x 18, 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter, Flow-Through Outputs 128K的3656 × 18.3V的同步ZBT SRAM.3V的I / O的脉冲计数器，流量，通过输出
128K x 36, 256K x 18, 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter, Flow-Through Outputs 128K X 36 ZBT SRAM, 7.5 ns, PBGA119
|
Integrated Device Technology, Inc.
INTEGRATED DEVICE TECHNOLOGY INC
|
|
