PART |
Description |
Maker |
NJG1553BF NJG1553BF-C1 NJG1553BF-C2 NJG1553BF-C3 N |
1.9ghZ band mixer gAaS mmic DIODE TVS 600W SMB GaAs MMIC Mixer IC With Built-in Local Amplifier for 1.9GHz PCS Applications(用于1.9GHz频带PCS型蜂巢电话的砷化镓单片微波集成电路混频器(内置本机放大) TVS UNIDIRECT 1500W 11V SMC TVS BIDIRECT 1500W 110V SMC TVS UNIDIRECT 1500W 100V SMC TVS UNIDIRECT 10V 1500W SMC TVS ZENER BIDIRECT 1500W 10V SMC TVS ZENER BIDIRECT 600W 90V SMB TVS UNIDIRECT 1500W 110V SMC
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http:// NJRC[New Japan Radio] New Japan Radio Co., Ltd.
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M391T2953BG0-CD5/CC M378T2953BG0-CD5/CC M378T3354B |
TVS UNIDIRECT 1500W 16V SMC 无缓冲DDR2的内存模 TVS UNIDIRECT 1500W 160V SMC TVS UNI-DIR 160V 1500W SMC TVS BIDIRECT 1500W 160V SMC DDR2 Unbuffered SDRAM MODULE
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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
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CD214B-T6.5CALF CD214B-T6.5ALF CD214A-T6.5ALF CD21 |
TVS Bidirect Diode 400 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA TVS Unidirect Diode 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA TVS Unidirect Diode 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC TVS Bidirect Diode 400 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC TVS Unidirect Diode 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB TVS Diode; Diode Type:Bidirectional TVS; Stand-Off Voltage, VRWM:24V; Breakdown Voltage, Vbr:26.7V; Package/Case:DO-214AA; Leaded Process Compatible:Yes; No. of Lines Protected Max:1; Peak Pulse Power PPK @ 10x1000uS:600W RoHS Compliant: Yes TVS Diode; Diode Type:Bidirectional TVS; Stand-Off Voltage, VRWM:24V; Breakdown Voltage, Vbr:26.7V; Package/Case:DO-214AC; Leaded Process Compatible:Yes; No. of Lines Protected Max:1; Peak Pulse Power PPK @ 10x1000uS:400W RoHS Compliant: Yes TVS Diode; Diode Type:Bidirectional TVS; Stand-Off Voltage, VRWM:100V; Breakdown Voltage, Vbr:111V; Package/Case:DO-214AC; Leaded Process Compatible:Yes; No. of Lines Protected Max:1; Peak Pulse Power PPK @ 10x1000uS:400W RoHS Compliant: Yes TVS Diode; Diode Type:Unidirectional TVS; Stand-Off Voltage, VRWM:33V; Breakdown Voltage, Vbr:36.7V; Package/Case:DO-214AB; Leaded Process Compatible:Yes; No. of Lines Protected Max:1; Peak Pulse Power PPK @ 10x1000uS:1500W RoHS Compliant: Yes TVS Diode; Diode Type:Unidirectional TVS; Stand-Off Voltage, VRWM:150V; Breakdown Voltage, Vbr:167V; Package/Case:DO-214AA; Leaded Process Compatible:Yes; No. of Lines Protected Max:1; Peak Pulse Power PPK @ 10x1000uS:600W RoHS Compliant: Yes TVS Diode; Diode Type:Bidirectional TVS; Stand-Off Voltage, VRWM:12V; Breakdown Voltage, Vbr:13.3V; Package/Case:DO-214AC; Leaded Process Compatible:Yes; No. of Lines Protected Max:1; Peak Pulse Power PPK @ 10x1000uS:400W RoHS Compliant: Yes TVS Diode; Diode Type:Bidirectional TVS; Stand-Off Voltage, VRWM:12V; Breakdown Voltage, Vbr:13.3V; Package/Case:DO-214AB; Leaded Process Compatible:Yes; No. of Lines Protected Max:1; Peak Pulse Power PPK @ 10x1000uS:1500W RoHS Compliant: Yes TVS Diode; Diode Type:Bidirectional TVS; Stand-Off Voltage, VRWM:20V; Breakdown Voltage, Vbr:22.2V; Package/Case:DO-214AB; Leaded Process Compatible:Yes; No. of Lines Protected Max:1; Peak Pulse Power PPK @ 10x1000uS:1500W RoHS Compliant: Yes CD214B Transient Voltage Suppressor Diode Series
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Bourns, Inc. BOURNS INC Bourns Electronic Solutions
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WM2331IDT/V WM2331CDT/V WM2331 |
TVS UNIDIRECT 600W 64V SMB TVS 600W 60V BIDIRECT SMB 10-bit 30MSPS ADC with PGA and Clamp
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Wolfson Microelectronics plc
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HC5513BIP HC5513BIM |
TVS 1500W 43V UNIDIRECT SMC Bipolar Transistor; Package/Case:TO-220; Current Rating:7A; Voltage Rating:80V RoHS Compliant: Yes TVS UNI-DIR 40V 1500W SMC
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Intersil Corporation
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1N1301 1N2283 1N4526 1N1196A 1N1196 1N2021 1N1192A |
Standard Rectifier (trr more than 500ns) (1N2xxx) SILICON POWER RECTIFIER SILICON POWER RECTIFIER 40 A, 200 V, SILICON, RECTIFIER DIODE, DO-203AB (1N4525 - 1N4529) SILICON POWER RECTIFIER SILICON POWER RECTIFIER 40 A, 100 V, SILICON, RECTIFIER DIODE, DO-203AB SILICON POWER RECTIFIER 40 A, 50 V, SILICON, RECTIFIER DIODE, DO-203AB SILICON POWER RECTIFIER 40 A, 350 V, SILICON, RECTIFIER DIODE, DO-203AB SILICON POWER RECTIFIER 40 A, 300 V, SILICON, RECTIFIER DIODE, DO-203AB SILICON POWER RECTIFIER 40 A, 400 V, SILICON, RECTIFIER DIODE, DO-203AB SILICON POWER RECTIFIER
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MICROSEMI[Microsemi Corporation] Microsemi, Corp.
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ISD380-9 ISD25-15 ISDF65-7 ISD320-16 ISDR320-22 IS |
380 A, 900 V, SILICON, RECTIFIER DIODE 25 A, 1500 V, SILICON, RECTIFIER DIODE 65 A, 700 V, SILICON, RECTIFIER DIODE 320 A, 1600 V, SILICON, RECTIFIER DIODE 320 A, 2200 V, SILICON, RECTIFIER DIODE 160 A, 1400 V, SILICON, RECTIFIER DIODE 65 A, 400 V, SILICON, RECTIFIER DIODE 380 A, 1300 V, SILICON, RECTIFIER DIODE 380 A, 1200 V, SILICON, RECTIFIER DIODE 380 A, 1500 V, SILICON, RECTIFIER DIODE 380 A, 600 V, SILICON, RECTIFIER DIODE 380 A, 400 V, SILICON, RECTIFIER DIODE 380 A, 500 V, SILICON, RECTIFIER DIODE 160 A, 900 V, SILICON, RECTIFIER DIODE 160 A, 1000 V, SILICON, RECTIFIER DIODE 160 A, 500 V, SILICON, RECTIFIER DIODE
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IR180DR-G06PBF IR150DR-G08PBF IR150DR-G04PBF IR180 |
25 A, 600 V, SILICON, RECTIFIER DIODE 16 A, 800 V, SILICON, RECTIFIER DIODE 16 A, 400 V, SILICON, RECTIFIER DIODE 25 A, 200 V, SILICON, RECTIFIER DIODE 25 A, 1000 V, SILICON, RECTIFIER DIODE 16 A, 1200 V, SILICON, RECTIFIER DIODE 16 A, 100 V, SILICON, RECTIFIER DIODE
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TT electronics Semelab, Ltd.
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RBU801M RBU801M10 RBU804M RBU805M RBU806M RBU801M- |
8 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 8.0 Amperes 8 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 8 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE 8 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
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RECTRON LTD Rectron Semiconductor
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1N4748A 1N4732A 1N4758A 1N4745A 1N4754A 1N4744A 1N |
Silicon Power Z-Diode for Voltage Stabilization(稳定电压22V,稳定电1.5mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定(稳定电2V的,稳定电流一十一点五毫安的硅功率齐纳二极管) Silicon Power Z-Diode for Voltage Stabilization(稳定电压3.9V,稳定电4mA的硅功率齐纳二极 硅功Z -二极管的电压稳定(稳定电压均.9V,稳定电流六十四毫安的硅功率齐纳二极管) Silicon Power Z-Diode for Voltage Stabilization(稳定电压16V,稳定电5.5mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定(稳定电6V的稳定电流一十五点五毫安的硅功率齐纳二极管) Silicon Power Z-Diode for Voltage Stabilization(稳定电压9.1V,稳定电8mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定(稳定电.1V,稳定电8毫安的硅功率齐纳二极管) Silicon Power Z-Diode for Voltage Stabilization(稳定电压12V,稳定电1mA的硅功率齐纳二极 硅功率Z -二极管的稳定电压12V的稳定电压,稳定电流21毫安的硅功率齐纳二极管) Silicon Power Z-Diode for Voltage Stabilization(稳定电压75V,稳定电.3mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定(稳定电5V的,稳定电流三点三毫安的硅功率齐纳二极管 Silicon Power Z-Diodes 硅功率Z -二极 Silicon Power Z-Diode for Voltage Stabilization(稳定电压13V,稳定电9mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定(稳定电3V的,稳定电流十九毫安的硅功率齐纳二极管) Silicon Power Z-Diode for Voltage Stabilization(稳定电压20V,稳定电2.5mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定(稳定电0V的,稳定电流十二点五毫安的硅功率齐纳二极管) Silicon Power Z-Diode for Voltage Stabilization(稳定电压8.2V,稳定电1mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定(稳定电.2V,稳定电流三一毫安的硅功率齐纳二极管) Silicon Power Z-Diode for Voltage Stabilization(稳定电压6.2V,稳定电1mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定(稳定电.2V,稳定电1毫安的硅功率齐纳二极管) Silicon Power Z-Diode for Voltage Stabilization(稳定电压3.6V,稳定电9mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定(稳定电.6V的稳定电9毫安的硅功率齐纳二极管) Silicon Power Z-Diode for Voltage Stabilization(稳定电压4.7V,稳定电3mA的硅功率齐纳二极 Silicon Power Z-Diode for Voltage Stabilization(稳定电压5.1V,稳定电9mA的硅功率齐纳二极 From old datasheet system Silicon Power Z?Diodes
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Vishay Intertechnology, Inc. Vishay Intertechnology,Inc. TFUNK[Vishay Telefunken]
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MBM29DL323BE90PBT MBM29DL323BE90TN MBM29DL323BE90T |
2M X 16 FLASH 2.7V PROM, 120 ns, PBGA63 32M (4M x 8/2M x 16) BIT Dual Operation 2M X 16 FLASH 3V PROM, 80 ns, PBGA63 32M (4M x 8/2M x 16) BIT Dual Operation 2M X 16 FLASH 3V PROM, 120 ns, PBGA63 TVS UNIDIRECT 600W 51V SMB 2M X 16 FLASH 3V PROM, 120 ns, PDSO48 MICRO SINGLE MODE FIBER TRANCEIVER, ST 32M的(4米8/2M × 16)位双操 32M (4M x 8/2M x 16) BIT Dual Operation 2M X 16 FLASH 3V PROM, 120 ns, PDSO48 32M (4M x 8/2M x 16) BIT Dual Operation 32M的(4米8/2M × 16)位双操 KPT 6C 6#20 SKT PLUG 2M X 16 FLASH 3V PROM, 90 ns, PDSO48 16 PORT MODULAR SWITCH ROHS VERSION LE1416A BLANK FACE PLATE 4 PORT 100 MB SINGLE-MODEFIBER XSNT SUPPR,ESD,060.00V,0603 MULTI-WAY IEC PANEL OUTLET 8 PORT MODULAR SWITCH PCI 10BASE T/10 BASE FL NIC, S TVS UNI-DIR 43V 600W SMB
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Fujitsu, Ltd. Fujitsu Limited http:// Fujitsu Component Limited.
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