| PART |
Description |
Maker |
| SFF250M-1 |
30 AMP 200 VOLTS 00.075 ohm N-Channel Power MOSFET 30 A, 200 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254
|
Solid States Devices, Inc.
Solid State Devices, Inc.
|
| APT50M75JFLL |
POWER MOS 7 500V 52A 0.075 Ohm
|
Advanced Power Technology
|
| 2SJ603-S 2SJ603-ZJ 2SJ603-Z-AZ |
25 A, 60 V, 0.075 ohm, P-CHANNEL, Si, POWER, MOSFET
MOS FIELD EFFECT TRANSISTOR MOS场效应管
Pch power MOSFET 60V RDS(on)MAX=48m ohm TO-220AB,TO-262,TO-263
|
NEC, Corp.
NEC Corp.
|
| MUX08AQ_883C MUX08BQ_883C MUX08EP |
8-Chan/Dual 4-Chan JFET Analog Multiplexers (Overvoltage & Power Supply Loss Protected)
|
Analog Devices
|
| MTW32N20E MTW32N20E_D ON2691 |
TMOS POWER FET 32 AMPERES 200 VOLTS RDS(on) = 0.075 OHM
From old datasheet system
|
Motorola, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
|
| WE128K32-XH1X WE128K32-XG2TX WE128K32NP-200H1Q WE1 |
EEPROM MCP
128K X 32 EEPROM 5V MODULE, 200 ns, CPGA66 1.075 X 1.075 INCH, HERMETIC SEALED, CERAMIC, HIP-66
128K X 32 EEPROM 5V MODULE, 120 ns, CPGA66 1.075 x 1.075 INCH, HERMETIC SEALED, CERAMIC, HIP-66
128K X 32 EEPROM 5V MODULE, 150 ns, CPGA66 1.075 X 1.075 INCH, HERMETIC SEALED, CERAMIC, HIP-66
128K X 32 EEPROM 5V MODULE, 140 ns, CPGA66 1.075 X 1.075 INCH, HERMETIC SEALED, CERAMIC, HIP-66
128K X 32 EEPROM 5V MODULE, 250 ns, CPGA66 1.075 X 1.075 INCH, HERMETIC SEALED, CERAMIC, HIP-66
|
Microsemi, Corp.
White Electronic Designs, Corp.
|
| APT60M75PVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 600V 60.5A 0.075 Ohm
|
Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
|
| APT50M75JLL |
POWER MOS 7 500V 52A 0.075 Ohm
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology
|
| APT60M75JFLL |
POWER MOS 7 600V 58A 0.075 Ohm
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology
|
| ITE08C06 ITE08F06 |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 8A I(C) | TO-247AA
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 8A I(C) | TO-220AB 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展| 8A条一（c）| TO - 220AB现有
|
Continental Device India, Ltd.
|
| ITZ08F12P ITZ08F12B |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 16A I(C) | TO-247
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 16A I(C) | TO-220AB 晶体管| IGBT的|正陈| 1.2KV五（巴西）国际消费电子展| 16A条一（c）| TO - 220AB现有
|
Microsemi, Corp.
|
