PART |
Description |
Maker |
MTP4N40E MTP4N40E-D |
TMOS POWER FET 4.0 AMPERES 400 VOLTS RDS(on) = 1.8 OHM 4 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola Mobility Holdings, Inc. Motorola, Inc ON Semiconductor
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RFL4N12 RFL4N15 |
4A, 120V and 150V, 0.400 Ohm, N-Channel Power MOSFETs 4000 mA, 120 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-205AF 4A/ 120V and 150V/ 0.400 Ohm/ N-Channel Power MOSFETs
|
Intersil, Corp. Intersil Corporation
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APT40M70JVFR |
53 A, 400 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET Power FREDFET; Package: ISOTOP®; ID (A): 53; RDS(on) (Ohms): 0.07; BVDSS (V): 400; POWER MOS V FREDFET
|
MICROSEMI POWER PRODUCTS GROUP ADPOW[Advanced Power Technology]
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APT4012BVFR APT4012SVFR APT4012BVFRG |
Power FREDFET; Package: TO-247 [B]; ID (A): 37; RDS(on) (Ohms): 0.12; BVDSS (V): 400; 37 A, 400 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD POWER MOS V FREDFET
|
Microsemi, Corp. Advanced Power Technology
|
IRFR320BTM IRFR320BTF |
3.1 A, 400 V, 1.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
|
FAIRCHILD SEMICONDUCTOR CORP
|
FDP13N40 |
13 A, 400 V, 0.37 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
FAIRCHILD SEMICONDUCTOR CORP
|
SFF330-28 |
5.5 AMP 400 Volts 1.1 OHM N-Channel POWER MOSFET
|
SSDI[Solid States Devices, Inc]
|
RFP8P08 RFP8P10 RFM8P10 RFM8P08 |
-8A, -80V AND -100V, 0.400 Ohm, P-CHANNEL POWER MOSFETS
|
HARRIS[Harris Corporation]
|
FQU5N40TU |
400V N-Channel QFET; Package: TO-251(IPAK); No of Pins: 3; Container: Rail 3.4 A, 400 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
|
Fairchild Semiconductor, Corp.
|
BUZ325 C67078-S3118-A2 |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) 12.5 A, 400 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218 From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
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