| PART |
Description |
Maker |
| MMSF10N02ZR2 |
10000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET CASE 751-07, SOP-8
|
ON Semiconductor
|
| MMSF10N03ZR2 |
10000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET MINIATURE, CASE 751-05, SO-8
|
Motorola Mobility Holdings, Inc.
|
| MIC94030 MIC94030BM4 MIC94031BM4 4030B MIC94031 |
TinyFET P-Channel MOSFET(TinyFET???P娌??澧?己??OS?烘?搴??)
TinyFETP-Channel MOSFET Preliminary Information TinyFETP沟道MOSFET的初步信
10000 SYSTEM GATE 3.3 VOLT LOGIC CELL AR - NOT RECOMMENDED for NEW DESIGN
TinyFET P-Channel MOSFET(TinyFET技P沟道增强型MOS场效应管)
TinyFET P-Channel MOSFET Preliminary Information
TinyFET⑩ P-Channel MOSFET Preliminary Information
TinyFET?/a> P-Channel MOSFET Preliminary Information
|
Micrel Semiconductor, Inc.
Micrel Semiconductor,Inc.
MICREL[Micrel Semiconductor]
|
| NE529F NE529H |
COMPARATOR, 10000 uV OFFSET-MAX, CDIP14
COMPARATOR, 10000 uV OFFSET-MAX, MBCY10
|
NXP SEMICONDUCTORS
|
| BC847BDW1T3 |
General Purpose Transistor Dual NPN; Package: SC-88/SC70-6/SOT-363 6 LEAD; No of Pins: 6; Container: Tape and Reel; Qty per Container: 10000 100 mA, 45 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
|
ON Semiconductor
|
| BYX101GAMO |
0.4 A, 10000 V, SILICON, SIGNAL DIODE
|
NXP SEMICONDUCTORS
|
| NTD10 |
0.3 A, 10000 V, SILICON, SIGNAL DIODE
|
|
| CFB949AQ CFD1275AQ CFB949AP CFD1275AP CFD1275R CFB |
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFD1275AQ
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFB949AQ
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFD1275AP
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFB949AP
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 2500 hFE. Complementary CFB949R
2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFD1275
2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFD1275P
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFD1275AR
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFD1275A
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFB949
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFB949Q
|
Continental Device India Limited
|
| M100FF5 |
10000 V rectifier 10-40 mA forward current,50 ns recovery time
|
Voltage Multipliers, Inc.
|
| MX29LV040QI-70 MX29LV040TI-70 MX29LV040QC-70 |
0.5A 40V Schottky Rectifier; Package: SOD-123 2 LEAD; No of Pins: 2; Container: Tape and Reel; Qty per Container: 10000
0.5A 30V Schottky Rectifier; Package: SOD-123 2 LEAD; No of Pins: 2; Container: Tape and Reel; Qty per Container: 10000
4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY EQUAL SECTOR FLASH MEMORY 512K X 8 FLASH 3V PROM, 70 ns, PQCC32
|
Macronix International Co., Ltd.
|
|
