| PART |
Description |
Maker |
| QED123 QED122 QED121 QED122A3R0 |
PLASTIC INFRARED LIGHT EMITTING DIODE 4.95 mm, 1 ELEMENT, INFRARED LED, 890 nm
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| 1N6266 |
GAAS INFRARED EMITTING DIODE 1 ELEMENT, INFRARED LED, 940 nm
|
QT[QT Optoelectronics]
|
| 1N6264 |
GAAS INFRARED EMITTING DIODE 1 ELEMENT, INFRARED LED, 940 nm
|
QT[QT Optoelectronics]
|
| QEC113 QEC112 |
GAAS INFRARED EMITTING DIODE 2.9 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
QT[QT Optoelectronics]
|
| LN59-LNA2702L LNA2702L LN59 |
GaAs Bi-directional Infrared Light Emitting Diodes 2.5 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
Panasonic, Corp.
Panasonic Corporation
Panasonic Semiconductor
|
| ASDL-4770-C22 ASDL-4770-C41 |
1 ELEMENT, INFRARED LED, 940 nm
High Performance Side look AlGaAs/GaAs Infrared (940nm) Lamp
|
AVAGO TECHNOLOGIES LIMITED
http://
|
| ASDL-4772-C41 ASDL-4772-C22 |
1.6 mm, 1 ELEMENT, INFRARED LED, 940 nm
High Performance Side look AlGaAs/GaAs Infrared (940nm) Lamp
|
Lite-On Technology, Corp.
AVAGO TECHNOLOGIES LIMITED
|
| OA100FL16 OA100FL18 OA100NL15 OA100NL19 CA25FL20 C |
1 ELEMENT, 18000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 46000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 16000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 100000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 830 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 130000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 7300 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 7400000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 180000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 30000000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 40000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 8000000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 280000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 31000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 260000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 11000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 830000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 5300 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 2300000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 15000000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 1100000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 3200000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 27000000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 35000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 7700 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 6300000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 2500 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 11000000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 2600000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 4200000 uH, GENERAL PURPOSE INDUCTOR
|
|
| Q62703-Q1090 SFH483E7800 SFH483 |
GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter 1 ELEMENT, INFRARED LED, 880 nm
GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter 发动器，红外Lumineszenzdiode GaAlA红外发射
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| TSHA4400 |
3 mm, 1 ELEMENT, INFRARED LED, 875 nm
|
VISHAY SEMICONDUCTORS
|
|
