| PART |
Description |
Maker |
| DL4004-13 DL4006-13 |
RECTIFIER GPP 400V 1A SMD MELF 1 A, 400 V, SILICON, SIGNAL DIODE
1 A, 800 V, SILICON, SIGNAL DIODE PLASTIC, MELF-2
|
Diodes, Inc.
|
| 15DF8 |
1 A, 800 V, SILICON, SIGNAL DIODE
|
NIHON INTER ELECTRONICS CORP
|
| YF80 |
0.2 A, 800 V, SILICON, SIGNAL DIODE
|
PANASONIC CORP
|
| FR1K-T3 |
1 A, 800 V, SILICON, SIGNAL DIODE, DO-214AA
|
SENSITRON SEMICONDUCTOR
|
| 1N4003-A 1N4004-A 1N4003-T 1N4002L-T 1N4006L-T 1N4 |
1.0A RECTIFIER 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41
1.0A RECTIFIER 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41
1.0A RECTIFIER 1 A, 800 V, SILICON, SIGNAL DIODE
1.0A RECTIFIER 1 A, 100 V, SILICON, SIGNAL DIODE, DO-41
|
Diodes Inc.
Diodes, Inc.
|
| MUR1100ERLG MUR1100EG MUR180E_06 MUR1100E MUR1100E |
SWITCHMODE Power Rectifiers 1 A, 800 V, SILICON, SIGNAL DIODE
|
ONSEMI[ON Semiconductor]
|
| FR306G-F FR306GH31 1N4942GM02 |
3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD
1 A, 200 V, SILICON, SIGNAL DIODE, DO-41
|
RECTRON LTD
|
| UF1003-A UF1002-A UF1007-A UF1007-B UF1001-A UF100 |
1.0A ULTRA-FAST RECTIFIER 1 A, 200 V, SILICON, SIGNAL DIODE, DO-41
1.0A ULTRA-FAST RECTIFIER 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41
1.0A ULTRA-FAST RECTIFIER 1 A, 50 V, SILICON, SIGNAL DIODE, DO-41
1.0A ULTRA-FAST RECTIFIER 1 A, 800 V, SILICON, SIGNAL DIODE, DO-41
1.0A ULTRA-FAST RECTIFIER 1 A, 100 V, SILICON, SIGNAL DIODE, DO-41
1.0A ULTRA-FAST RECTIFIER 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41
|
Diodes Inc.
Diodes, Inc.
|
| BCW67BCW68 BCW68F Q62702-C1555 Q62702-C1893 BCW68 |
PNP Silicon AF Transistors (For general AF applications High current gain) 800 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236
PNP Silicon AF Transistors (For general AF applications High current gain) 800 mA, 32 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236
From old datasheet system
|
Siemens Semiconductor G...
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| SDA5000 SDA5000HF SDA12500 SDA15000 SDA8000 SDA100 |
STANDARD RECOVERY HIGH VOLTAGE RECTIFIER
0.5 A, 10000 V, SILICON, SIGNAL DIODE
0.5 A, 12500 V, SILICON, SIGNAL DIODE
0.5 A, 22000 V, SILICON, SIGNAL DIODE
0.5 A, 19000 V, SILICON, SIGNAL DIODE
|
Solid States Devices, Inc
SOLID STATE DEVICES INC
|
| BCW66G BCW65A BCW66F BCW65 Q62702-C1892 BCW65B BCW |
NPN Silicon AF Transistors (For general AF applications High current gain) 800 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| EGP10A08 EGP10B-TP |
1.0 Amp Glass Passivated High Efficient Rectifiers 50 to 800 Volts
DIODE GPP 1A 100V HI EFF DO41 1 A, 100 V, SILICON, SIGNAL DIODE, DO-41
|
Micro Commercial Components, Corp.
|
|
