PART |
Description |
Maker |
BGA616 |
Silicon MMICs - SiGe 0...5GHz, 15dB Broadband Amplifier, Pout = 18dBm, SOT343
|
Infineon
|
BGA430 BGB540 |
A 35 dB Gain-Sloped LNB I.F. Amplifier for Direct Broadcast Satellite Television Applications using the BGA430 & BGB540 Silicon MMICs
|
INFINEON[Infineon Technologies AG]
|
BGB540 |
Active Biased RF Transistor Silicon MMICs - Mirror-Biased BFP540 in SIEGET 45 Technology, Icmax = 80mA, SOT343
|
Infineon Technologies A... INFINEON[Infineon Technologies AG]
|
BGA612 |
Silicon MMICs - SiGe 0...5GHz, 15dB Broadband Amplifier, Pout = 8dBm, SOT343 Silicon Germanium Broadband MMIC Amplifier
|
INFINEON[Infineon Technologies AG]
|
Q68000-A7851 IRL80A IRL80 |
GaAs-Infrarot-Sendediode GaAs Infrared Emitter From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
SFH400 SFH401 |
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Lead (Pb) Free Product - RoHS Compliant
|
OSRAM GmbH
|
SFH4511 Q62703Q5557 |
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Lead (Pb) Free Product - RoHS Compliant
|
OSRAM GmbH
|
CF750 Q62702-F1391 |
From old datasheet system GaAs MMIC (Biased Dual Gate GaAs FET) 砷化镓微波单片集成电路(偏置双门砷化镓场效应管)
|
Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
SBB-4089 SBB-4089Z |
0.05-6 GHz, Cascadable Active Bias InGaP/GaAs HBT MMIC Amplifier 0.05-6千兆赫,级联有源偏置的InGaP / GaAs HBT的MMIC放大
|
Electronic Theatre Controls, Inc. http://
|
Q62703-Q1031 LD274 Q62703-Q1820 LD274-2 LD274-3 Q6 |
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter 砷化镓红外Lumineszenzdiode砷化镓红外发射器
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|