| PART |
Description |
Maker |
| HGTP10N120BN HGTG10N120BN HGT1S10N120BNS HGT1S10N1 |
1200V, NPT Series N-Channel IGBT; Package: TO-263(D2PAK); No of Pins: 2; Container: Tape & Reel 35 A, 1200 V, N-CHANNEL IGBT, TO-263AB
35A/ 1200V/ NPT Series N-Channel IGBT
35A, 1200V, NPT Series N-Channel IGBT
35 A, 1200 V, NPT N-Channel IGBT
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| 5SMX12N4507 |
IGBT-Die 40 A, 4500 V, N-CHANNEL IGBT
|
ABB, Ltd.
The ABB Group
|
| CM75E3U-24H |
Chopper IGBTMOD 75 Amperes/1200 Volts 75 A, 1200 V, N-CHANNEL IGBT
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| APT50GT120B2RDQ2G |
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: T-MAX™ [B2]; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 50; 94 A, 1200 V, N-CHANNEL IGBT, TO-247
|
Microsemi, Corp.
|
| APT35GN120L2DQ2 APT35GN120L2DQ2G |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: 264 MAX™ [L2]; BV(CES) (V): 1200; VCE(sat) (V): 1.7; IC (A): 46; 94 A, 1200 V, N-CHANNEL IGBT
|
Microsemi, Corp.
Advanced Power Technology
|
| GP200MKS12 |
IGBT Chopper Module Preliminary Information 200 A, 1200 V, N-CHANNEL IGBT
|
Dynex Semiconductor, Ltd.
DYNEX[Dynex Semiconductor]
|
| APTGF100A120TG |
Phase leg NPT IGBT Power Module 135 A, 1200 V, N-CHANNEL IGBT
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| IRG4PSH71K |
78 A, 1200 V, N-CHANNEL IGBT
1200V UltraFast 4-20 kHz Discrete IGBT in a TO-274AA package
|
International Rectifier
|
| SEMIX101GD126HDS08 |
Trench IGBT Modules 130 A, 1200 V, N-CHANNEL IGBT
|
Semikron International
|
| SEMIX151GB12T4S |
Trench IGBT Modules 230 A, 1200 V, N-CHANNEL IGBT
|
SEMIKRON
|
| SEMIX503GB126HDS |
Trench IGBT Modules 480 A, 1200 V, N-CHANNEL IGBT
|
SEMIKRON[Semikron International]
|
