| PART |
Description |
Maker |
| UPD44164362F5-E60-EQ1 UPD44164082 UPD44164082F5-E4 |
18M-BIT DDRII SRAM 2-WORD BURST OPERATION
|
NEC[NEC]
|
| UPD44164365F5-E60-EQ1 UPD44164085 UPD44164085F5-E4 |
18M-BIT DDRII SRAM SEPARATE I/O 2-WORD BURST OPERATION
|
NEC[NEC]
|
| PD44164362BF5-E35-EQ3-A PD44164362BF5-E40-EQ3-A PD |
18M-BIT DDR II SRAM 2-WORD BURST OPERATION
|
Renesas Electronics Corporation
|
| PD46184185BF1-E40-EQ1 PD46184095BF1-E40-EQ1 PD4618 |
18M-BIT DDR II SRAM SEPARATE I/O 2-WORD BURST OPERATION
|
Renesas Electronics Corporation
|
| UPD44165362F5-E75-EQ1 UPD44165082 UPD44165082F5-E5 |
(UPD44165082/182/362) 18M-BIT QDRII SRAM 2-WORD BURST OPERATION
|
NEC[NEC]
|
| R1Q5A3636BBG-60R R1Q5A3618BBG-60R |
36-Mbit DDRII SRAM 4-word Burst
|
Renesas Electronics Corporation
http://
|
| K7I161882B-FC16 K7I161882B-FC20 K7I161882B-FC25 K7 |
512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM 512Kx36位，1Mx18位首席信息官b2DDRII的SRAM
GT 35C 35#16 PIN PLUG RTANG
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| M5M5W817KT-70HI |
Memory>Low Power SRAM
8388608-BIT (524288-WORD BY 16-BIT / 10485776-WORD BY 8-BIT) CMOS STATIC RAM
|
Renesas Electronics Corporation
|
| LC3564B LC3564BM LC3564BS LC3564BT LC3564BT-10 LC3 |
x8 SRAM
64K (8192-word 8-bit) SRAM with OE, CE1, and CE2 Control Pins
64K (8192-word ? 8-bit) SRAM with OE, CE1, and CE2 Control Pins
64K (8192-word x8-bit) SRAM with NOT OE, NOT CE1, and CE2 Control Pins
64K (8192-word x 8-bit) SRAM with NOT OE, NOT CE1, and CE2 Control Pins
64K (8192-word 8-bit) SRAM with OE / CE1 / and CE2 Control Pins
64K (8192-word ′ 8-bit) SRAM with OE, CE1, and CE2 Control Pins
64K (8192-word 8-bit) SRAM with OE, CE1, and CE2 Control Pins 64K的（8192字?8位）与光电，CE1上SRAM和控制引脚铈
|
SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
Sanyo Electric Co., Ltd.
|
| UPD44325084 UPD44325084F5-E50-EQ2 UPD44325094F5-E5 |
CABLE ASSEMBLY; LEAD-FREE SOLDER; SMA MALE TO SMA MALE; 50 OHM, RG142B/U COAX, DOUBLE SHIELDED
36M-BIT QDRII SRAM 4-WORD BURST OPERATION 36M条位推出QDRII SRAM4个字爆发运作
36M-BIT QDRII SRAM 4-WORD BURST OPERATION 36M条位推出QDRII SRAM个字爆发运作
4M X 8 QDR SRAM, 0.45 ns, PBGA165 13 X 15 MM, PLASTIC, FBGA-165
|
NEC Corp.
NEC, Corp.
|
| UPD4416016G5-A15-9JF UPD4416016G5-A17-9JF UPD44160 |
1M X 16 STANDARD SRAM, 15 ns, PDSO54
CONNECTOR ACCESSORY
16M-BIT CMOS FAST SRAM 1M-WORD BY 16-BIT
|
NEC Corp.
NEC[NEC]
|
