PART |
Description |
Maker |
APT50M75LLL APT50M75B2LL APT50M75B2LL_04 APT50M75B |
Power MOSFET; Package: T-MAX™ [B2]; ID (A): 57; RDS(on) (Ohms): 0.075; BVDSS (V): 500; 57 A, 500 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET POWER MOS 7 R MOSFET
|
Microsemi, Corp. ADPOW[Advanced Power Technology]
|
APT40M75JN APT40M90JN |
POWER MOS IV 400V 56.0A 0.075 Ohm / 400V 51.0A 0.090 Ohm N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
APT50M75B2LL APT50M75LLL |
POWER MOS 7 500V 57A 0.075 Ohm
|
Advanced Power Technology
|
SPD30P06P-E4-E6327 |
30 A, 60 V, 0.075 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252 ROHS COMPLIANT PACKAGE-3
|
Infineon Technologies AG
|
STC08DE150 |
HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT 1500 V - 8 A - 0.075 OHM
|
STMICROELECTRONICS[STMicroelectronics]
|
STC08DE150HP C08DE150HP |
Hybrid emitter switched bipolar transistor ESBT 1500V - 8A - 0.075 ohm
|
STMICROELECTRONICS[STMicroelectronics]
|
STC08DE150 |
HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR - ESBT" 1500 V - 8 A - 0.075 Ohm
|
ST Microelectronics
|
SI4980DY-T1-E3 |
TRANSISTOR 3.7 A, 80 V, 0.075 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, SOP-8, FET General Purpose Power
|
Vishay Siliconix
|
ITE08C06 ITE08F06 |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 8A I(C) | TO-247AA TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 8A I(C) | TO-220AB 晶体管| IGBT的|正陈| 600V的五(巴西)国际消费电子展| 8A条一(c)| TO - 220AB现有
|
Continental Device India, Ltd.
|
APT50M75B2FLL APT50M75LFLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 电源MOS 7TM是一个低损耗,高电压,N沟道增强型功率MOSFET的新一代 POWER MOS 7 500V 57A 0.075 Ohm
|
Advanced Power Technology, Ltd. Advanced Power Technology Ltd.
|
ITZ08F12P ITZ08F12B |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 16A I(C) | TO-247 TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 16A I(C) | TO-220AB 晶体管| IGBT的|正陈| 1.2KV五(巴西)国际消费电子展| 16A条一(c)| TO - 220AB现有
|
Microsemi, Corp.
|