| PART |
Description |
Maker |
| UPA1818 UPA1818GR-9JG UPA1818GR-9JG-A UPA1818GR-9J |
Pch enhancement MOS FET
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING P沟道MOS场效应晶体管开
10000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET POWER, TSSOP-8
|
NEC Corp.
NEC, Corp.
Lattice Semiconductor, Corp.
|
| NTR1P02T3G |
Power MOSFET -20 V, -1 A, P-Channel SOT-23; Package: SOT-23 (TO-236) 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 10000 1000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
|
ON Semiconductor
|
| SI4421DY-T1-E3 |
TRANSISTOR 10000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, SOP-8, FET General Purpose Small Signal
|
Vishay Siliconix
|
| WCR2512-10KFI WCR0402-10KFI WCR0201-10KFI WCR1210- |
50General Purpose Surface Mounted Resistors RESISTOR, 1 W, 1 %, 200 ppm, 10000 ohm, SURFACE MOUNT, 2512
50General Purpose Surface Mounted Resistors RESISTOR, 0.063 W, 1 %, 100 ppm, 10000 ohm, SURFACE MOUNT, 0402
50General Purpose Surface Mounted Resistors RESISTOR, 0.05 W, 1 %, 250 ppm, 10000 ohm, SURFACE MOUNT, 0201
50General Purpose Surface Mounted Resistors RESISTOR, 0.25 W, 1 %, 100 ppm, 10000 ohm, SURFACE MOUNT, 1210
|
Welwyn Components, Ltd.
|
| NTR4003N NTR4003NT1G NTR4003NT3G |
30V N-Channel PowerTrench MOSFET 500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236
Power MOSFET 30 V, 0.56 A. Single N-Channel SOT-23 Package; Package: SOT-23 (TO-236) 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 10000 500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236
Small Signal MOSFET 30 V, 0.56 A, Single N−Channel, SOT−23
|
3M Company
ON Semiconductor
|
| 0070.5021.B1 0070.9521.B1 0070.1181.B1 0070.1111.A |
11 - 95 VAC ・ 250 - 10000 A ・ 5 - 20 mm
|
Schurter Inc.
|
| BYX101GAMO |
0.4 A, 10000 V, SILICON, SIGNAL DIODE
|
NXP SEMICONDUCTORS
|
| CFB949AQ CFD1275AQ CFB949AP CFD1275AP CFD1275R CFB |
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFD1275AQ
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFB949AQ
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFD1275AP
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFB949AP
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 2500 hFE. Complementary CFB949R
2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFD1275
2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFD1275P
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFD1275AR
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFD1275A
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFB949
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFB949Q
|
Continental Device India Limited
|
| AN6581 |
DUAL OP-AMP, 10000 uV OFFSET-MAX, PSIP9
|
PANASONIC CORP
|
| M100FF5 |
10000 V rectifier 10-40 mA forward current,50 ns recovery time
|
Voltage Multipliers, Inc.
|
| SDS0402BL-103M-S |
1 ELEMENT, 10000 uH, GENERAL PURPOSE INDUCTOR, SMD
|
YAGEO CORP
|
| ZX10R-14 |
Power Splitter/Combiner 2 Way-0 Resistive 50Ω DC to 10000 MHz
|
Mini-Circuits
|
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