| PART |
Description |
Maker |
| HY27UG164GDM-UPEB HY27UG084GDM-UPEB HY27UG164G2M-T |
256M X 16 FLASH 3.3V PROM, 30 ns, PBGA52 12 X 17 MM, 0.65 MM HEIGHT, LEAD FREE, ULGA-52
512M X 8 FLASH 3.3V PROM, 30 ns, PBGA52 12 X 17 MM, 0.65 MM HEIGHT, LEAD FREE, ULGA-52
256M X 16 FLASH 3.3V PROM, 30 ns, PDSO48
|
Hynix Semiconductor, Inc.
HYNIX SEMICONDUCTOR INC
|
| HY27UF082G2B HY27UF162G2B HY27UF082G2B-F |
2Gb NAND FLASH
256M X 8 FLASH 3.3V PROM, PBGA63
|
HYNIX SEMICONDUCTOR INC
|
| MT29F4G16BABWP |
256M X 16 FLASH 2.7V PROM, 30 ns, PDSO48
|
|
| SST39VF010-90-4C-B3KE SST39VF040-90-4C-WHE SST39VF |
128K X 8 FLASH 2.7V PROM, 90 ns, PBGA48
512K X 8 FLASH 2.7V PROM, 90 ns, PDSO32
512K X 8 FLASH 2.7V PROM, 90 ns, PQCC32
64K X 8 FLASH 2.7V PROM, 90 ns, PDSO32
256K X 8 FLASH 2.7V PROM, 90 ns, PDSO32
|
SILICON STORAGE TECHNOLOGY INC
|
| LE25FU206 LE25FU206MA |
2M-bit Serial Flash Memory
256M X 8 FLASH 2.7V PROM, PDSO8
|
Sanyo Semicon Device
|
| S29CD032J0MFAM033 S29CD016J0MQFM130 S29CD016J0PQFM |
32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O 1M X 32 FLASH 2.7V PROM, 54 ns, PBGA80
512K X 32 FLASH 2.7V PROM, 54 ns, PQFP80
1M X 32 FLASH 3.3V PROM, 54 ns, PBGA80
|
Spansion, Inc.
SPANSION LLC
|
| AS8FLC1M32BP-70/IT AS8FLC1M32BQ-100/XT AS8FLC1M32B |
1M X 32 FLASH 3V PROM, 70 ns, CPGA66 HERMETIC SEALED, CERAMIC, HIP-66
1M X 32 FLASH 3V PROM, 100 ns, CQFP68
1M X 32 FLASH 3V PROM, 120 ns, CQFP68
|
Micross Components
|
| AS8FLC2M32BP-70/IT 5962-0824504HXC 5962-0824502HXC |
2M X 32 FLASH 3V PROM, 70 ns, CPGA66 HERMETIC SEALED, CERAMIC, HIP-66
2M X 32 FLASH 3V PROM, 70 ns, CQFP68
2M X 32 FLASH 3V PROM, 100 ns, CQFP68
|
Micross Components
|
| HY27US08561A HY27US16561A HY27SS08561A HY27SS16561 |
256Mbit (32Mx8bit / 16Mx16bit) NAND Flash
32M X 8 FLASH 1.8V PROM, 35 ns, PBGA63 9 X 11 MM, 1 MM HEIGHT, LEAD FREE, FBGA-63
32M X 8 FLASH 1.8V PROM, 35 ns, PDSO48 12 X 20 MM, 1.20 MM HEIGHT, TSOP1-48
32M X 8 FLASH 1.8V PROM, 35 ns, PBGA63 9 X 11 MM, 1 MM HEIGHT, FBGA-63
32M X 8 FLASH 1.8V PROM, 35 ns, PDSO48 12 X 17 MM, 0.65 MM HEIGHT, LEAD FREE, USOP1-48
32M X 8 FLASH 1.8V PROM, 35 ns, PDSO48 12 X 17 MM, 0.65 MM HEIGHT, USOP1-48
16M X 16 FLASH 1.8V PROM, 35 ns, PDSO48 12 X 17 MM, 0.65 MM HEIGHT, USOP1-48
32M X 8 FLASH 3.3V PROM, 30 ns, PBGA63
16M X 16 FLASH 1.8V PROM, 35 ns, PBGA63
|
Hynix Semiconductor, Inc.
HYNIX SEMICONDUCTOR INC
|
| NAND256-A NAND01G-A NAND01GW3A2AZB1 NAND01GW3A0AZB |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆，256兆，512兆位千兆位（x8/x1628 Byte/264字的页面.8V/3V，NAND闪存芯片
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆，256兆，512兆位1千兆位（x8/x1628 Byte/264字的页面1.8V/3V，NAND闪存芯片
128M X 8 FLASH 1.8V PROM, 35 ns, PBGA63
8M X 16 FLASH 1.8V PROM, 35 ns, PDSO48
64M X 8 FLASH 3V PROM, 35 ns, PBGA55
64M X 16 FLASH 1.8V PROM, 35 ns, PDSO48
128M X 8 FLASH 3V PROM, 35 ns, PDSO48
8M X 16 FLASH 3V PROM, 35 ns, PDSO48
32M X 16 FLASH 3V PROM, 35 ns, PDSO48
32M X 16 FLASH 3V PROM, 35 ns, PBGA55
|
ST Microelectronics
意法半导
STMicroelectronics N.V.
NUMONYX
http://
|
| W29EE012 W39L020P-70 W39L020P-70B W39L020P-90 W39L |
128K X 8 FLASH 5V PROM, 90 ns, PQCC32
128K X 8 FLASH 5V PROM, 90 ns, PDSO32
128K X 8 CMOS FLASH MEMORY 256K X 8 FLASH 3.3V PROM, 90 ns, PDSO32
|
Winbond Electronics, Corp.
Winbond Electronics Corp
WINBOND[Winbond]
|
|
