| PART |
Description |
Maker |
| V58C2256324SHUR4E V58C2256324SHUR6E V58C2256324SHU |
8M X 32 DDR DRAM, PBGA60 ROHS COMPLIANT, MO-233, FBGA-60
64M X 4 DDR DRAM, PBGA60
|
ProMOS Technologies, Inc.
PROMOS TECHNOLOGIES INC
|
| HY5DV641622AT-5 |
64M(4Mx16) DDR SDRAM 4M X 16 DDR DRAM, 0.5 ns, PDSO66
|
Hynix Semiconductor, Inc.
|
| MT8VDDT3232UG-75XX MT8VDDT12832UY-75XX MT8VDDT6432 |
32M X 32 DDR DRAM MODULE, 0.75 ns, DMA100 DIMM-100
128M X 32 DDR DRAM MODULE, 0.75 ns, DMA100 LEAD FREE, DIMM-100
64M X 32 DDR DRAM MODULE, 0.75 ns, DMA100
|
Lattice Semiconductor, Corp.
|
| HYMP112U64CR8-C4 HYMP125U64CR8-C4 HYMP112U64CR8-S5 |
240pin DDR2 SDRAM Unbuffered DIMMs
64M X 64 DDR DRAM MODULE, 0.4 ns, ZMA240 ROHS COMPLIANT, DIMM-240
64M X 64 DDR DRAM MODULE, 0.45 ns, ZMA240 ROHS COMPLIANT, DIMM-240
128M X 64 DDR DRAM MODULE, 0.45 ns, ZMA240 ROHS COMPLIANT, DIMM-240
128M X 72 DDR DRAM MODULE, 0.5 ns, ZMA240 ROHS COMPLIANT, DIMM-240
128M X 64 DDR DRAM MODULE, 0.5 ns, ZMA240 ROHS COMPLIANT, DIMM-240
128M X 72 DDR DRAM MODULE, 0.45 ns, ZMA240 ROHS COMPLIANT, DIMM-240
|
http://
Hynix Semiconductor, Inc.
|
| HY5DU56422CLF-J |
64M X 4 DDR DRAM, 0.7 ns, PBGA60
|
HYNIX SEMICONDUCTOR INC
|
| HY5PS12821F-Y6 |
64M X 8 DDR DRAM, PBGA60
|
HYNIX SEMICONDUCTOR INC
|
| IS43DR16640A-3DBLI |
64M X 16 DDR DRAM, 0.45 ns, PBGA84
|
INTEGRATED SILICON SOLUTION INC
|
| HY5DU56422ALT-K HY5DU56422ALT-J HY5DU56822ALT-J HY |
256M-S DDR SDRAM 64M X 4 DDR DRAM, 0.7 ns, PDSO66
256M-S DDR SDRAM 16M X 16 DDR DRAM, 0.75 ns, PDSO66
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| HYI25D512160DE-6 HYI25D512160DT-6 HYI25D512160DF-6 |
32M X 16 DDR DRAM, 0.7 ns, PDSO66 GREEN, PLASTIC, TSOP2-66
32M X 16 DDR DRAM, 0.7 ns, PDSO66 PLASTIC, TSOP2-66
32M X 16 DDR DRAM, 0.7 ns, PBGA60 GREEN, PLASTIC, TFBGA-60
32M X 16 DDR DRAM, 0.7 ns, PBGA60 PLASTIC, TFBGA-60
64M X 8 DDR DRAM, 0.7 ns, PBGA60 GREEN, PLASTIC, TFBGA-60
64M X 8 DDR DRAM, 0.7 ns, PDSO66
|
Qimonda AG
|
| NT512MD72S89B0GY-5T |
64M X 72 DDR DRAM MODULE, 0.7 ns, DMA184
|
NANYA TECHNOLOGY CORP
|
| M470T3354CZ0-E6 M470T2953CZ0-E6 M470T6554CZ0-E6 M4 |
32M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
DDR2 Unbuffered SODIMM 无缓冲DDR2内存的SODIMM
64M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
128M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
|
