| PART |
Description |
Maker |
| CSD3080H |
Single SCR POW-R-BLOK?/a> Modules 400 Amperes/800 Volts
Single SCR POW-R-BLOK Modules 400 Amperes/800 Volts
Single SCR POW-R-BLOK⑩ Modules 400 Amperes/800 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| NGB8202N NGB8202NT4 |
Ignition IGBT 20 A, 400 V, N-Channel D<sup>2</sup>PAK
20 A, 400 V, N-Channel D2PAK
20 A, 400 V, N−Channel D2PAK
|
ONSEMI[ON Semiconductor]
|
| RFL4N12 RFL4N15 |
4A, 120V and 150V, 0.400 Ohm, N-Channel Power MOSFETs 4000 mA, 120 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-205AF
4A/ 120V and 150V/ 0.400 Ohm/ N-Channel Power MOSFETs
|
Intersil, Corp.
Intersil Corporation
|
| CM431690 CM431290 |
Dual SCR POW-R-BLOK?Modules 90 Amperes/1200-1600 Volts
Dual SCR POW-R-BLOK?/a> Modules 90 Amperes/1200-1600 Volts
Dual SCR POW-R-BLOK⑩ Modules 90 Amperes/1200-1600 Volts
Dual SCR POW-R-BLOK Modules 90 Amperes/1200-1600 Volts
Dual SCR POW-R-BLOKModules 90 Amperes/1200-1600 Volts 140 A, 1200 V, SCR
|
Powerex Power Semicondu...
POWEREX[Powerex Power Semiconductors]
Powerex, Inc.
|
| APT40M70JVFR |
53 A, 400 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET
Power FREDFET; Package: ISOTOP®; ID (A): 53; RDS(on) (Ohms): 0.07; BVDSS (V): 400;
POWER MOS V FREDFET
|
MICROSEMI POWER PRODUCTS GROUP
ADPOW[Advanced Power Technology]
|
| CM531613 CM531213 |
Dual SCR POW-R-BLOK⑩ Modules 200 Amperes/800 Volts
Dual SCR POW-R-BLOK Modules 200 Amperes/800 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| CM4316A2 CM4312A2 |
Dual SCR POW-R-BLOK Modules 25 Amperes/1200-1600 Volts
Dual SCR POW-R-BLOK⑩ Modules 25 Amperes/1200-1600 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| MSAFZ15N40A MSAFX14N100A FSE1850 FSE1350 FSE1540 F |
N Channel MOSFET; Package: CoolPack1; trr (nsec): 120; t(on) (nsec): 180; ID (A): 15; RDS(on) (Ohms): 0.3; PD (W): 300; BVDSS (V): 400; Rq: 0.4; VSD (V): 1.5 SMALL SIGNAL, FET
N Channel MOSFET; Package: CoolPack1; trr (nsec): 850; t(on) (nsec): 60; ID (A): 14; RDS(on) (Ohms): 0.82; PD (W): 310; BVDSS (V): 1000; Rq: 0.25; VGS(th) (V): 4; VSD (V): 1.5 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1200; t(on) (nsec): 35; ID (A): 18; RDS(on) (Ohms): 0.28; PD (W): 150; BVDSS (V): 500; Rq: 0.9; VSD (V): 1.8 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1200; t(on) (nsec): 27; ID (A): 13; RDS(on) (Ohms): 0.4; PD (W): 125; BVDSS (V): 500; Rq: 1; VSD (V): 1.4 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1000; t(on) (nsec): 35; ID (A): 15; RDS(on) (Ohms): 0.3; PD (W): 125; BVDSS (V): 400; Rq: 1; VSD (V): 1.6 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1000; t(on) (nsec): 33; ID (A): 20; RDS(on) (Ohms): 0.21; PD (W): 150; BVDSS (V): 400; Rq: 0.9; VSD (V): 1.8 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-257; trr (nsec): 660; t(on) (nsec): 17; ID (A): 5; RDS(on) (Ohms): 1; PD (W): 50; BVDSS (V): 400; Rq: 2; VSD (V): 1.6 5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Microsemi, Corp.
|
| CECWP2G272M2-L22 CECWP2G392M3-L22 CECWP2G102M1-L22 |
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 400 V, 2700 uF, CHASSIS MOUNT
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 400 V, 3900 uF, CHASSIS MOUNT
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 400 V, 1000 uF, CHASSIS MOUNT
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 400 V, 330 uF, CHASSIS MOUNT
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 400 V, 2200 uF, CHASSIS MOUNT
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 400 V, 1200 uF, CHASSIS MOUNT
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 400 V, 5600 uF, CHASSIS MOUNT
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 400 V, 1800 uF, CHASSIS MOUNT
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 400 V, 3300 uF, CHASSIS MOUNT
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 400 V, 560 uF, CHASSIS MOUNT
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 400 V, 470 uF, CHASSIS MOUNT
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 400 V, 1500 uF, CHASSIS MOUNT
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 400 V, 390 uF, CHASSIS MOUNT
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 400 V, 4700 uF, CHASSIS MOUNT
|
Nippon Chemi-con, Corp.
|
| CD430840A CD431240A CD431640A CD4340A |
POW-R-BLOK Dual SCR Isolated Module 40 Amperes / Up to 1600 Volts 63 A, 800 V, SCR
POW-R-BLOK Dual SCR Isolated Module 40 Amperes / Up to 1600 Volts 的POW - r -隔离台BLOk反应腔双可控硅模块四零安高达1600伏特
|
Powerex Power Semicondu...
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
Powerex Power Semiconductor...
|
| CDD11210 CDD11610 |
Dual Diode POW-R-BLOK??Modules 100 Amperes/1200-1600 Volts
Dual Diode POW-R-BLOK⑩ Modules 100 Amperes/1200-1600 Volts
Dual Diode POW-R-BLOK Modules 100 Amperes/1200-1600 Volts
|
POWEREX INC
POWEREX[Powerex Power Semiconductors]
|
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