| PART |
Description |
Maker |
| SFF250M-1 |
30 AMP 200 VOLTS 00.075 ohm N-Channel Power MOSFET 30 A, 200 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254
|
Solid States Devices, Inc.
Solid State Devices, Inc.
|
| BUZ101SL-4 |
Quad-Channel SIPMOS Power Transistor
SIPMOS ? Power Transistor
4.1 A, 55 V, 0.075 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PLASTIC, DSO-28
SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated) 4.1 A, 55 V, 0.075 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
http://
Siemens Semiconductor Group
Infineon Technologies AG
SIEMENS AG
|
| HUF76409D3 HUF76409D3S |
17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFET 18 A, 60 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
|
Fairchild Semiconductor, Corp.
|
| S0404AA13R8BKW S0404AA17R8BKW S0404AA19R8BKW S0404 |
RESISTOR, THIN FILM, 0.075 W, 0.1 %, 100 ppm, 13.8 ohm, SURFACE MOUNT, 0404 CHIP
RESISTOR, THIN FILM, 0.075 W, 0.1 %, 100 ppm, 17.8 ohm, SURFACE MOUNT, 0404 CHIP
RESISTOR, THIN FILM, 0.075 W, 0.1 %, 100 ppm, 19.8 ohm, SURFACE MOUNT, 0404 CHIP
RESISTOR, THIN FILM, 0.075 W, 0.1 %, 100 ppm, 34.8 ohm, SURFACE MOUNT, 0404 CHIP
RESISTOR, THIN FILM, 0.075 W, 0.1 %, 100 ppm, 20.8 ohm, SURFACE MOUNT, 0404 CHIP
RESISTOR, THIN FILM, 0.075 W, 0.1 %, 100 ppm, 32.8 ohm, SURFACE MOUNT, 0404 CHIP
RESISTOR, THIN FILM, 0.075 W, 0.1 %, 100 ppm, 15.8 ohm, SURFACE MOUNT, 0404 CHIP
RESISTOR, THIN FILM, 0.075 W, 0.1 %, 100 ppm, 25.8 ohm, SURFACE MOUNT, 0404 CHIP
RESISTOR, THIN FILM, 0.075 W, 0.1 %, 100 ppm, 21.8 ohm, SURFACE MOUNT, 0404 CHIP
RESISTOR, THIN FILM, 0.075 W, 0.1 %, 100 ppm, 38.8 ohm, SURFACE MOUNT, 0404 CHIP
RESISTOR, THIN FILM, 0.075 W, 0.1 %, 100 ppm, 29.8 ohm, SURFACE MOUNT, 0404 CHIP
RESISTOR, THIN FILM, 0.075 W, 0.1 %, 100 ppm, 11.8 ohm, SURFACE MOUNT, 0404 CHIP
|
State of the Art, Inc.
|
| 2SK2896-01L 2SK2896-01S |
CAN2DC-79SF0 45 A, 60 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Connector,D-Shell,Cable Mnt,PLUG,79 Contacts,SKT,0.075 Pitch,#4-40 45 A, 60 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET
N-channel MOS-FET
|
Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
|
| WE128K32-XH1X WE128K32-XG2TX WE128K32NP-200H1Q WE1 |
EEPROM MCP
128K X 32 EEPROM 5V MODULE, 200 ns, CPGA66 1.075 X 1.075 INCH, HERMETIC SEALED, CERAMIC, HIP-66
128K X 32 EEPROM 5V MODULE, 120 ns, CPGA66 1.075 x 1.075 INCH, HERMETIC SEALED, CERAMIC, HIP-66
128K X 32 EEPROM 5V MODULE, 150 ns, CPGA66 1.075 X 1.075 INCH, HERMETIC SEALED, CERAMIC, HIP-66
128K X 32 EEPROM 5V MODULE, 140 ns, CPGA66 1.075 X 1.075 INCH, HERMETIC SEALED, CERAMIC, HIP-66
128K X 32 EEPROM 5V MODULE, 250 ns, CPGA66 1.075 X 1.075 INCH, HERMETIC SEALED, CERAMIC, HIP-66
|
Microsemi, Corp.
White Electronic Designs, Corp.
|
| APT60M75PVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 600V 60.5A 0.075 Ohm
|
Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
|
| APT60M75JFLL |
POWER MOS 7 600V 58A 0.075 Ohm
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology
|
| AS8S128K32Q1-35_883C AS8S128K32Q1-35_IT AS8S128K32 |
128K x 32 SRAM SRAM MEMORY ARRAY
128K X 32 MULTI DEVICE SRAM MODULE, 45 ns, CPGA66 1.075 X 1.075 INCH, 0.195 INCH HEIGHT, CERAMIC, PGA-66
128K X 32 MULTI DEVICE SRAM MODULE, 17 ns, CPGA66 1.075 X 1.075 INCH, 0.195 INCH HEIGHT, CERAMIC, PGA-66
128K X 32 MULTI DEVICE SRAM MODULE, 25 ns, CPGA66 1.075 X 1.075 INCH, 0.195 INCH HEIGHT, CERAMIC, PGA-66
128K X 32 MULTI DEVICE SRAM MODULE, 35 ns, CPGA66 1.075 X 1.075 INCH, 0.195 INCH HEIGHT, CERAMIC, PGA-66
128K X 32 MULTI DEVICE SRAM MODULE, 17 ns, CQFP68 0.140 INCH HEIGHT, CERAMIC, QFP-68
|
http://
Austin Semiconductor, Inc
|
| SI9933ADY SI9933ADYNL |
3.4 A, 20 V, 0.075 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET SO-8
Dual P-Channel PowerTrench MOSFET
|
Fairchild Semiconductor, Corp.
|
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